NSS40301MZ4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS40301MZ4
Código: 40301
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 215 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT223
- Selección de transistores por parámetros
NSS40301MZ4 Datasheet (PDF)
nss40301mz4.pdf

NSS40301MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where NPN TRANSISTORaffordable effic
nss40301mz4t1g.pdf

NSS40301MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where NPN TRANSISTORaffordable effic
nss40301mz4t3g.pdf

NSS40301MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where NPN TRANSISTORaffordable effic
nss40301mdr2g.pdf

DATA SHEETwww.onsemi.comDual Matched 40 V, 6.0 A,40 VOLTS6.0 AMPSLow VCE(sat) NPN TransistorNPN LOW VCE(sat) TRANSISTOREQUIVALENT RDS(on) 44 mWNSS40301MDR2GThese transistors are part of the onsemi e2PowerEdge family of LowVCE(sat) transistors. They are assembled to create a pair of devicesCOLLECTOR COLLECTORhighly matched in all parameters, including ultra low saturation
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N2292 | 2SC5027AF | BSP62T1 | INC5001AP1 | KT948B | 2SD1061Q | 2SD1953
History: 2N2292 | 2SC5027AF | BSP62T1 | INC5001AP1 | KT948B | 2SD1061Q | 2SD1953



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
30g124 | 75339p mosfet | a968 transistor | f1010e mosfet | 2sc3883 | c3306 datasheet | hy3810 | c711 transistor