NSV1C201L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSV1C201L
Código: VT*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.49 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 110 MHz
Capacitancia de salida (Cc): 14 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de NSV1C201L
NSV1C201L Datasheet (PDF)
nss1c201l nsv1c201l.pdf

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i
nsv1c201lt1g.pdf

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is i
nsv1c201mz4t1g.pdf

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont
nss1c201mz4 nsv1c201mz4.pdf

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2S171 | MMDT5451 | 2SC3142J3 | 2SC3150M | KT315Zh1 | 2S46
History: 2S171 | MMDT5451 | 2SC3142J3 | 2SC3150M | KT315Zh1 | 2S46



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