NSVF4017SG4 Todos los transistores

 

NSVF4017SG4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVF4017SG4
   Código: GQ
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.45 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 8000 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: MCPH4
 

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NSVF4017SG4 Datasheet (PDF)

 ..1. Size:838K  onsemi
 nsvf4017sg4.pdf pdf_icon

NSVF4017SG4

NSVF4017SG4RF Transistor for Low NoiseAmplifier12 V, 100 mA, fT = 10 GHz typ.This RF transistor is designed for low noise amplifier applications.www.onsemi.comMCPH package is suitable for use under high temperatureenvironment because it has superior heat radiation characteristics.This RF transistor is AEC-Q101 qualified and PPAP capable forautomotive applications.Features 1

 7.1. Size:216K  onsemi
 nsvf4015sg4.pdf pdf_icon

NSVF4017SG4

NSVF4015SG4RF Transistor for Low NoiseAmplifier12 V, 100 mA, fT = 10 GHz typ.This RF transistor is designed for low noise amplifier applications.www.onsemi.comMCPH package is suitable for use under high temperatureenvironment because it has superior heat radiation characteristics.This RF transistor is AEC-Q101 qualified and PPAP capable for12 V, 100 mAautomotive applications

 8.1. Size:684K  onsemi
 nsvf4020sg4.pdf pdf_icon

NSVF4017SG4

NSVF4020SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 8 V, 150 mA Features fT = 16 GHz t

 8.2. Size:718K  onsemi
 nsvf4009sg4.pdf pdf_icon

NSVF4017SG4

NSVF4009SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 3.5 V, 40 mA Features fT = 25 GHz

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KCW72 | 2SB1103

 

 
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