PN2907ATF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PN2907ATF
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar PN2907ATF
PN2907ATF Datasheet (PDF)
pn2907abu pn2907atf pn2907atfr pn2907ata pn2907atar mmbt2907a mmbt2907a d87z pzt2907a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
pn2907a cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PN2907APNP switching transistor1997 May 05Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP switching transistor PN2907AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 collecto
pn2907a.pdf
PN2907ASMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentPN2907A PN2907A TO-92 / BulkPN2907A-AP PN2907A TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNPTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE ISPN2222ATO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQU
pzt2907a pn2907a mmbt2907a.pdf
PN2907A MMBT2907A PZT2907ACCEECBC TO-92BSOT-23B SOT-223EMark: 2FPNP General Purpose AmplifierThis device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA. Sourcedfrom Process 63.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBO C
pn2907a to-92.pdf
MCCTM Micro Commercial Components20736 Marilla Street ChatsworthPN2907AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole Package Capable of 600mWatts of Power Dissipation and 600mA IcPNP General Lead Free Finish/RoHS Compliant ("P" Suffix designates Purpose AmplifierRoHS Compliant. See ordering information)
pn2907a.pdf
PN2907APreferred DeviceGeneral Purpose TransistorPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO -60 VdcCollector - Base Voltage VCBO -60 Vdc1EMITTEREmitter - Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -600 mAdcTotal Device Dissipation @
pn2907a mmbt2907a pzt2907a.pdf
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pn2907a.pdf
UNISONIC TECHNOLOGIES CO., LTD PN2907A PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION This UTC PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 600 mA. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 PN2907AL-AB3-R PN2907AG-AB3-R SOT-89 B C E
hpn2907a.pdf
Spec. No. : HE6105HI-SINCERITYIssued Date : 1992.09.09Revised Date : 2004.12.15MICROELECTRONICS CORP.Page No. : 1/5HPN2907APNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HPN2907A is designed for general purpose amplifier and high speed,medium-power switching applications.FeaturesTO-92 Low Collector Saturation voltage High Speed Switching For Complementary U
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SB1136S | 2SB1197KQLT1
History: 2SB1136S | 2SB1197KQLT1
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050