SMMBT5401LT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMMBT5401LT1G
Código: 2L*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 160
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar SMMBT5401LT1G
SMMBT5401LT1G
Datasheet (PDF)
..1. Size:112K onsemi
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MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6CompliantCOLLECTORMAXIMUM RATI
4.1. Size:81K onsemi
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9.1. Size:92K onsemi
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9.3. Size:128K onsemi
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9.13. Size:125K onsemi
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9.14. Size:91K onsemi
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