TIP117G Todos los transistores

 ..1. Size:307K  onsemi
 tip110 tip110g tip111 tip111g tip112 tip112g tip115 tip115g tip116 tip116g tip117 tip117g.pdf

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon www.onsemi.com Transistors DARLINGTON Designed for general-purpose amplifier and low-speed switching applications. 2 AMPERE COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS = 1.0 Adc Collector-Emitt

 8.1. Size:243K  st
 tip110 tip112 tip115 tip117.pdf

TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS 3 2 LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT TO-220 DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN

 8.2. Size:373K  mcc
 tip115 tip116 tip117 to-220.pdf

MCC TIP115 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components TIP116 CA 91311 Phone (818) 701-4933 TIP117 Fax (818) 701-4939 Features High DC Current Gain hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) Low Collector-Emitter Saturation Voltage PNP Epitaxial Complementary to TIP110/111/112 Lead Free Finish/RoHS Compliant (Note1) ("

 8.3. Size:75K  kec
 tip117.pdf

SEMICONDUCTOR TIP117 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN A BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. R S FEATURES P D High DC Current Gain. DIM MILLIMETERS hFE=1000(Min.), VCE=-4V, IC=-1A. A 10.30 MAX B 15.30 MAX Low Collector-Emitter Saturation Voltage. C 0.80 _ + Complementary to TIP112. D 3.60 0.20 T E 3.00

 8.4. Size:445K  kec
 tip117f.pdf

SEMICONDUCTOR TIP117F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E High DC Current Gain. C _ 2.70 0.3 + D 0.76+0.09/-0.05 hFE=1000(Min.), VCE=-4V, IC=-1A. _ E 3.2 0.2 + _ F 3.0 0.3 + Low Collector-Emitter Saturation Vol

 8.5. Size:43K  hsmc
 htip117.pdf

Spec. No. HE200204 HI-SINCERITY Issued Date 2000.08.01 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/4 HTIP117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP117 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temp

 8.6. Size:814K  jilin sino
 tip112 tip117.pdf

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP112/TIP117 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform power amplifier circuit FEATURES Hi

 8.7. Size:274K  lzg
 tip117 3ca117.pdf

TIP117(3CA117) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP112(3DA112) Features Complement to TIP112(3DA112). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

 8.8. Size:213K  inchange semiconductor
 tip117.pdf

isc Silicon PNP Darlington Power Transistor TIP117 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.5V(Max)@ I = -2A CE(sat) C Complement to Type TIP112 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA