TIP117G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TIP110, TIP111, TIP112(NPN); TIP115, TIP116,TIP117 (PNP)Plastic Medium-PowerComplementary Siliconwww.onsemi.comTransistorsDARLINGTONDesigned for general-purpose amplifier and low-speed switchingapplications. 2 AMPERECOMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain -hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS= 1.0 Adc Collector-Emitt

TIP110/112TIP115/117COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 32 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-220DESCRIPTION The TIP110 and TIP112 are siliconEpitaxial-Base NPN

TIP110/112TIP115/117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1DESCRIPTIONTO-220The TIP110 and TIP112 are silicon epitaxial-baseNPN transistors in mon

MCCTIP115Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsTIP116CA 91311Phone: (818) 701-4933TIP117Fax: (818) 701-4939Features High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) Low Collector-Emitter Saturation VoltagePNP Epitaxial Complementary to TIP110/111/112 Lead Free Finish/RoHS Compliant (Note1) ("

SEMICONDUCTOR TIP117TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN ABASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.RS FEATURESPD High DC Current Gain. DIM MILLIMETERS: hFE=1000(Min.), VCE=-4V, IC=-1A.A 10.30 MAXB 15.30 MAX Low Collector-Emitter Saturation Voltage.C 0.80_+ Complementary to TIP112. D 3.60 0.20TE 3.00

SEMICONDUCTOR TIP117FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3EHigh DC Current Gain. C _2.70 0.3+D 0.76+0.09/-0.05: hFE=1000(Min.), VCE=-4V, IC=-1A._E 3.2 0.2+_F 3.0 0.3+Low Collector-Emitter Saturation Vol

Spec. No. : HE200204HI-SINCERITYIssued Date : 2000.08.01Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/4HTIP117PNP EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP117 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temp

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RTIP112/TIP117 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform power amplifier circuit FEATURES Hi

TIP117(3CA117) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP112(3DA112) Features: Complement to TIP112(3DA112). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

isc Silicon PNP Darlington Power Transistor TIP117DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -2ACE(sat) CComplement to Type TIP112Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICA