TIP41G Todos los transistores

 ..1. Size:271K  onsemi
 tip41g tip41ag tip41bg tip41cg tip42g tip42ag tip42bg tip42cg.pdf

TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) Complementary Silicon www.onsemi.com Plastic Power Transistors 6 AMPERE Designed for use in general purpose amplifier and switching applications. COMPLEMENTARY SILICON POWER TRANSISTORS Features Epoxy Meets UL 94 V-0 @ 0.125 in 40-60-80-100 VOLTS, These Devices are Pb-Free and are RoHS Complia

 9.1. Size:222K  motorola
 tip41are.pdf

Order this document MOTOROLA by TIP41A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP41A Complementary Silicon Plastic TIP41B* Power Transistors TIP41C* . . . designed for use in general purpose amplifier and switching applications. PNP Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc TIP42A Collector Emitter Sustaining Voltage VCEO(sus) =

 9.2. Size:186K  st
 tip41a tip42a.pdf

TIP41A TIP42A COMPLEMENTARY SILICON POWER TRANSISTOR Features COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE IMPROVED LINEARITY 3 2 Applications 1 GENERAL PURPOSE CIRCUITS TO-220 AUDIO AMPLIFIER POWER LINEAR AND SWITCHING Description Internal Schematic Diagram The TIP41A is a silicon base island technology NPN power tran

 9.3. Size:267K  st
 tip41c-r tip41c-o tip41c-y tip42c-r tip42c-o tip42c-y.pdf

TIP41C TIP42C Complementary power transistors . Features Complementary PNP-NPN devices New enhanced series High switching speed hFE grouping hFE improved linearity 3 2 1 Applications TO-220 General purpose circuits Audio amplifier Figure 1. Internal schematic diagram Power linear and switching Description The TIP41C is a base island technolog

 9.4. Size:66K  st
 tip41-42c.pdf

TIP41A/41B/41C TIP42A/42B/42C COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are TIP42A, TIP42B and TIP42C. 3 2 1 TO-220 INTERNAL SC

 9.5. Size:275K  st
 tip41c tip42c.pdf

TIP41C TIP42C Complementary power transistors . Features Complementary PNP-NPN devices New enhanced series High switching speed hFE grouping hFE improved linearity 3 2 1 Applications TO-220 General purpose circuits Audio amplifier Figure 1. Internal schematic diagram Power linear and switching Description The TIP41C is a base island technolog

 9.6. Size:39K  st
 tip41a tip41b tip41c tip42a tip42b tip42c.pdf

TIP41A/41B/41C TIP42A/42B/42C COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are TIP42A, TIP42B and TIP42C. 3 2 1 TO-220 INTERNAL SCH

 9.7. Size:527K  fairchild semi
 tip41 tip41a tip41b tip41c.pdf

July 2008 TIP41/TIP41A/TIP41B/TIP41C NPN Epitaxial Silicon Transistor Features Complementary to TIP42/TIP42A/TIP42B/TIP42C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Emitter Voltage TIP41 40 V TIP41A 60 V TIP41B 80 V TIP41C 100 V VCEO Collector-Emitter Voltage TIP41 40 V TI

 9.8. Size:39K  fairchild semi
 tip41abc.pdf

TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Emitter Voltage TIP41 40 V TIP41A 60 V TIP41B 80 V TIP41C 100 V VCEO Collector-Emitter Vo

 9.9. Size:50K  samsung
 tip41.pdf

TIP41 SERIES (TIP41/41A/41B/41C) NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complement to TIP42/42A/42B/42C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage TIP41 VCBO 40 V TIP41A 60 V TIP41B 80 V TIP41C 100 V Collector Emitter Voltage TIP41 VCEO 40 V TIP41A 60 V TIP41B 80 V 1.Base 2.C

 9.10. Size:339K  central
 tip41-a-b-c.pdf

TIP41 TIP41A TIP41B www.centralsemi.com TIP41C DESCRIPTION NPN SILICON The CENTRAL SEMICONDUCTOR TIP41 SERIES POWER TRANSISTOR types are NPN Epitaxial-Base Silicon Power Transistors designed for power amplifier and high speed switching applications. MARKING FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS (TC=25 C) SYMBOL TIP41 TIP41A TIP41B TIP41C UNITS Collector-Base Voltage

 9.11. Size:248K  mcc
 tip41 tip41a tip41b tip41c to-220.pdf

MCC Micro Commercial Components TM TIP41/41A/41B/41C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN The complementary PNP types are the TIP42 respectively Epoxy meets UL 94 V-0

 9.12. Size:93K  onsemi
 tip41 tip41a tip41b tip41c tip42 tip42a tip42b tip42c.pdf

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http //onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE Features COMPLEMENTARY SILICON ESD Ratings Machine Model, C; > 400 V POWER TRANSISTORS Human Body Model, 3B; > 8000 V 40-60-80-100 VOLTS, Epoxy Meets U

 9.13. Size:215K  utc
 tip41c.pdf

UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURE * Complement to TIP42C SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Ha

 9.14. Size:189K  mospec
 tip41 tip42.pdf

A A A A

 9.15. Size:317K  cdil
 tip41 a b c tip42.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP41, A, B, C NPN TIP42, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25

 9.16. Size:772K  jiangsu
 tip41 tip41a tip41b tip41c.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) TO-220-3L FEA TURES 1. BASE Medium Power Linear Switching Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Unit VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collecto

 9.17. Size:436K  kec
 tip41cf.pdf

SEMICONDUCTOR TIP41CF TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Complementary to TIP42CF. _ A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L CHARACTERISTIC SYMBOL RATING UNIT R K

 9.18. Size:67K  kec
 tip41c.pdf

SEMICONDUCTOR TIP41C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP42C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D 3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 VCBO L Collector-Base Voltage 100 V H 5.60 MAX C C J 1.37 MAX VCE

 9.19. Size:203K  lge
 tip41 tip41a tip41b tip41c.pdf

TIP41/41A/41B/41C TO-220 Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V

 9.20. Size:130K  wietron
 tip41.pdf

TIP41 Series NPN Silicon Power Transistor P b Lead(Pb)-Free COLLECTOR 2 1 BASE 2 FEATURES 3 1 * Medium Power Linear Switching Applications 1. BASE 2. COLLECTOR 3. EMITTER 3 TO-220 EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Units VCBO Collector-Base Voltage 60 V 40 80 100 VCEO Collector-Emitter Voltage 100 V

 9.21. Size:42K  hsmc
 htip41c.pdf

Spec. No. HE6707 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/4 HTIP41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP41C is designed for use in general purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature .................................

 9.22. Size:678K  jilin sino
 tip41c.pdf

NPN NPN Epitaxial Silicon Transistor R TIP41C APPLICATIONS Medium Power Linear Switching Applications FEATURES V =100V (min) High collector voltage V =100V (min) CEO CEO TIP42C Complementary to TIP42C RoHS RoHS prod

 9.23. Size:972K  blue-rocket-elect
 tip41.pdf

TIP41 Rev. G Nov.-2017 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features TIP42 Complement to TIP42. / Applications Medium power linear switching applications. / Equivalent Circuit / P

 9.24. Size:176K  blue-rocket-elect
 tip41p.pdf

TIP41P(3DA41P) NPN /SILICON NPN TRANSISTOR Purpose Medium power linear switching applications. TIP42P(3CA42P) Features Complement to TIP42P(3CA42P). /Absolute maximum ratings(Ta=25 ) Symbo Rating Unit 100 V V CBO 100 V V CEO V 5 V EBO I 6 A C I

 9.25. Size:204K  semtech
 tip41c.pdf

TIP41C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 6 A Collector Current IC 10 A Collector Current (Pulse) ICP 2 A Base Current IB O

 9.26. Size:229K  first silicon
 tip41c to220.pdf

SEMICONDUCTOR TIP41/41A/41B/41C TECHNICAL DATA A O C F E TIP41/41A/41B/41C TRANSISTOR (NPN) B DIM MILLIMETERS A 10.15 0.15 FEATURES B 15.30 MAX C 1.3 0.1/-0.15 P D 0.8 0.1 Medium Power Linear Switching Applications E 3.8 0.2 F 2.7 0.2 J H 0.4 0.15 D J 13.6 0.2 H N 2.54 0.2 N N O 4.5 0.2 1 2 3 P 2.7 0.2 1 BASE 2 COLLECTOR 3 EMITTER

 9.27. Size:1272K  kexin
 tip41.pdf

SMD Type Transistors NPN Transistors TIP41 Series (KIP41 Series) TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 Medium Power Linear Switching Applications Complement to TIP42/42A/42B/42C 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25

 9.28. Size:312K  feihonltd
 tip41ca.pdf

TRANSISTOR TIP41CA MAIN CHARACTERISTICS FEATURES IC 6A Epitaxial silicon VCEO 100V High switching speed PC 65W Complementary to TIP42CA TIP42CA APPLICATIONS RoHS RoHS product Medium Power Linear Switching Applications Pa

 9.29. Size:185K  lzg
 tip41 3da41.pdf

TIP41(3DA41) NPN /SILICON NPN TRANSISTOR Purpose Medium power linear switching applications. TIP42(3CA42) Features Complement to TIP42(3CA42). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit Symbol Rating Unit TIP41 40 V 5.0

 9.30. Size:1903K  jsmsemi
 tip41.pdf

TIP41 NPN / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. PIN1 Base / Features TIP42 PIN 2 Collector 1 2 3 Complement to TIP42. PIN 3 Emitter / Applications Medium power linear switching applications.

 9.31. Size:492K  cn evvo
 tip41c.pdf

TIP41C Silicon NPN Epitaxial Transistor TIP41C TIP41C, the base island technology NPN power transistor, make this device suitable for audio,power linear and switching applications.The complementary PNP type is TIP42C Features Complementary PNP-NPN devices h grouping FE h improved linearity FE RoHS product Applications General purpose circuits Audio amplifi

 9.32. Size:457K  cn tuofeng
 tip41a tip41b tip41c.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD TO-220 Plastic-Encapsulate Transistors TO-220 TIP41A/41B/41C TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM 2 W (Tamb=25 ) 3. EMITTER Collector current ICM 6 A 1 2 3 Collector-base voltage V(BR)CBO TIP41A 60 V TIP41B 80 V TIP41C 100 V Operating and storage junction te

 9.33. Size:1277K  cn sps
 tip41 tip41a tip41b tip41c.pdf

TIP41/41A/41B/41C Silicon NPN Power Transistors DESCRIPTION DC Current Gain -h = 30(Min)@ I = -0.3A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- TIP41; 60V(Min)- TIP41A CEO(SUS) 80V(Min)- TIP41B; 100V(Min)- TIP41C Complement to Type TIP42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(T

 9.34. Size:421K  cn minos
 tip41c.pdf

N P N S I L I C O N T R A N S I S T O R TIP41C T =25 a TO-220 T -55 150 stg T 150 j P =25 T 65W C

 9.35. Size:421K  cn sptech
 tip41 tip41a tip41b tip41c.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistors TIP41/41A/41B/41C DESCRIPTION DC Current Gain -h = 30(Min)@ I = -0.3A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- TIP41; 60V(Min)- TIP41A CEO(SUS) 80V(Min)- TIP41B; 100V(Min)- TIP41C Complement to Type TIP42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer and switching appl

 9.36. Size:180K  inchange semiconductor
 tip41 tip41a tip41b tip41c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP41/41A/41B/41C DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C Complement to Type TIP42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer

 9.37. Size:212K  inchange semiconductor
 tip41.pdf

isc Silicon NPN Power Transistors TIP41 DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Complement to Type TIP42 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATING

 9.38. Size:210K  inchange semiconductor
 tip41c.pdf

isc Silicon NPN Power Transistors TIP41C DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP42C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RAT

 9.39. Size:209K  inchange semiconductor
 tip41d.pdf

isc Silicon NPN Power Transistors TIP41D DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Complement to Type TIP42D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RAT

 9.40. Size:119K  inchange semiconductor
 tip41d tip41e tip41f.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP41D/41E/41F DESCRIPTION With TO-220C package Complement to type TIP42D/42E/42F APPLICATIONS For medium power linear switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS

 9.41. Size:210K  inchange semiconductor
 tip41e.pdf

isc Silicon NPN Power Transistors TIP41E DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 140V(Min) CEO(SUS) Complement to Type TIP42E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RAT