BC807K-40 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BC807K series 45 V, 500 mA PNP general-purpose transistors Rev. 2 24 April 2018 Product data sheet 1 Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEDEC BC807K-16 SOT23 TO-236AB BC817K-16 BC807K-25 BC817K-25 BC8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC807 16LT1/D BC807-16LT1 General Purpose Transistors PNP Silicon BC807-25LT1 COLLECTOR 3 BC807-40LT1 2 BASE 1 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 45 V Collector Base Voltage VCBO 50 V CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter Base Voltag

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BC807DS PNP general purpose double transistor Product data sheet 2002 Nov 22 Supersedes data of 2002 Aug 09 NXP Semiconductors Product data sheet PNP general purpose double transistor BC807DS FEATURES QUICK REFERENCE DATA High current (500 mA) SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipation VCEO colle

BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NPN complement NXP JEITA BC807 SOT23 - BC817 BC807W SOT323 SC-70 BC817W BC327[1] SOT54 (TO-92) SC-43A BC337 [1] Also available in SOT54A and SOT54 va

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W PNP general purpose transistor 1999 May 18 Product specification Supersedes data of 1997 Jun 09 Philips Semiconductors Product specification PNP general purpose transistor BC807W FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector

BC807-25 BC807-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Type Marking BC807-25 5B BC807-40 5C SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE BC817-25 AND BC817-40 RESPECTIVELY SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH

BC807/BC808 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages 3 Complement to BC817/BC818 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage BC807 -50 V BC808 -30 V VCEO Collector-

BC807DS PNP/PNP general purpose double transistors 3 May 2019 Product data sheet 1. General description PNP/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package. NPN/NPN complement BC817DS NPN/PNP complement BC817DPN 2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications General purpos

BC807-25QA; BC807-40QA 45 V, 500 mA PNP general-purpose transistors Rev. 1 30 August 2013 Product data sheet 1. Product profile 1.1 General description 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package NPN complement

BC807H series 45 V, 500 mA PNP general-purpose transistors Rev. 1 5 March 2019 Product data sheet 1. Product profile 1.1. General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN comlement Nexperia JEDEC BC807-16H SOT23 TO-236AB BC817K-16H BC807-25H BC817K-25H B

BC807RA 45 V, 500 mA PNP/PNP general-purpose double transistors 14 September 2018 Product data sheet 1. General description PNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement BC817RA NPN/PNP complement BC817RAPN 2. Features and benefits Reduces component count Reduces pick

BC807L; BC807LW 45 V, 500 mA PNP general-purpose transistors Rev. 1 5 January 2018 Product data sheet 1 Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia JEITA JEDEC BC807-16L SOT23 - TO-236AB BC807-25L BC807-40L

BC807 series 45 V, 500 mA PNP general-purpose transistors Rev. 7 15 June 2018 Product data sheet 1 Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEDEC JEITA BC807 SOT23 TO-236AB - BC817 BC807-16 BC817-16 BC807-

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC807-25QA; BC807-40QA 45 V, 500 mA PNP general-purpose transistors Rev. 1 30 August 2013 Product data sheet 1. Product profile 1.1 General description 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package NPN complement

BC807-25QA; BC807-40QA 45 V, 500 mA PNP general-purpose transistors Rev. 1 30 August 2013 Product data sheet 1. Product profile 1.1 General description 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package NPN complement

BC807W series 45 V, 500 mA PNP general-purpose transistors Rev. 7 3 July 2018 Product data sheet 1 Product profile 1.1 General description PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEDEC JEITA BC807W SOT323 - SC-70 BC817W BC807-16W BC817-16W BC

BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for AF-Driver stages and low power output stages Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Emitter Voltage BC807 VCES -50 V BC808 -30 V Collector Emitter Voltage BC807 VCEO -45 V BC808 -25 V Emitter-Base Voltage

BC 807-16W PNP Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types BC817W, BC818W (NPN) Type Marking Ordering Code Pin Configuration Package BC 807-16W 5As Q62702-C2325 1 = B 2 = E 3 = C SOT-323 BC 807-25W 5Bs Q62702-C2326 1 = B 2 = E 3 = C SOT-323 BC 807-40W 5Cs Q6

BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Ideally Suited for Automatic Insertion A SOT-23 Epitaxial Planar Die Construction C Dim Min Max For Switching, AF Driver and Amplifier Applications A 0.37 0.51 Complementary NPN Types Available (BC817) B C B 1.20 1.40 Lead, Halogen and

BC807-16W / -25W / -40W PNP SURFACE MOUNT TRANSISTOR Lead-free Green Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications SOT-323 Complementary NPN Types Available (BC817-xxW) Dim Min Max Lead Free By Design/RoHS Compliant (Note 1) A A 0.25 0.40 "Green" Device (Note 2) C B 1.15 1.35 Mechanic

SOT23 PNP SILICON PLANAR BC807 MEDIUM POWER TRANSISTORS BC808 ISSUE 4 JUNE 1996 T I D T I 8 D 8 8 E 8 8 8 C 8 8 8 8 8 8 B T T 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DIT

BC807-16W/ -25W/ -40W 45V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT323 Epitaxial Planar Die Construction Case Material Molded Plastic, Green Molding Compound Complementary NPN Types Available (BC817-xxW) UL Flammability Classification Rating 94V-0 For Switching and AF Amplifier Applica

BC807-16/-25/-40 45V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Epitaxial Planar Die Construction Case Material Molded Plastic, Green Molding Compound Complementary NPN Types Available (BC817) UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications

BC807U PNP Silicon AF Transistor Array For AF input stages and driver applications 4 3 High current gain 5 2 6 1 Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistor with good matching in on package Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Markin

BC807-16 THRU BC807-40 Features Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Small Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Signal Transistor 300mW Maximum Ratings SOT-23 Operating Junction Temperature Range -55 to

BC807-16 MCC Micro Commercial Components TM BC807-25 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 BC807-40 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) General Purpose Capable of 0.3Watts of Power Dissipation. Collector-curren

BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value

BC807-25W, BC807-40W General Purpose Transistors PNP Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Coll

BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value

BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value

BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value

BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value

DATA SHEET www.onsemi.com General Purpose COLLECTOR Transistors 3 PNP Silicon 1 BASE BC807-16L, BC807-25L, 2 BC807-40L EMITTER Features S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Compliant SOT-23 CASE 318

BC807-25W, BC807-40W General Purpose Transistors PNP Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Coll

BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value

BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value

BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors http //onsemi.com PNP Silicon COLLECTOR 3 Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector - Emitter Voltage VCEO -45 V 3 Collector - Base Voltage VCBO -50 V Emitter - Base Voltage VEBO -5.0 V 1 2 Col

BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

BC807-25W, BC807-40W General Purpose Transistors PNP Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Coll

BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value

UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 BC807G-xx-AE3-R SOT-23 E B C Tape Reel BC807G-xx-AL3-R SOT-323 E B C Tape Reel BC808G-xx-A

BC807 PNP Silicon Transistor Descriptions PIN Connection High current application Switching application C Features B Suitable for AF-Driver stage and E low power output stages Complementary Pair with BC817 SOT-23 Ordering Information Type NO. Marking Package Code0 LA BC807 SOT-23 Device Code hFE Rank Year&Week C

BC807F PNP Silicon Transistor Descriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power output stages 2 SOT-23F Complementary Pair with BC817F Ordering Information Type NO. Marking Package Code LA BC807F SOT-23F Device Code hFE Rank Year&

BC807 -16W, -25W, -40W -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES Ideally suited for automatic insertion A L Epitaxial planar die construction 3 3 Complementary to BC817W Top View C B 1 1 2 2 K E PACKAGE INFORMATION Weight 0.00

BC807-16, -25, -40 -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free & RoHS compliant FEATURES Ideally suited for automatic insertion SOT-23 Epitaxial planar die construction Collector 3 Dim Min Max Complementary to BC817 (NPN Type) A 2.800 3.040 1 Base B 1.200 1.400 2

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P N P transistor Marking BC807 = 5D BC807 16 = 5A BC807 25 = 5B BC807-40 = 5C BC808 = 5H BC808 16 = 5E BC808 25 = 5F BC808 40 = 5G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOL

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC807 TRANSISTOR (PNP) SOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-

SEMICONDUCTOR BC807W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M Complementary to BC817W. DIM MILLIMETERS _ + A 2.00 0.20 D 2 _ + B 1.25 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E 2.10 + 0.20 G 0.65 MAXIMUM RATING (Ta=25 ) H 0.15+0.1/-0.06 CHARACTERISTIC SYMBOL RATING UNIT J 1.30 K 0.00 0

SEMICONDUCTOR BC807 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Complementary to BC817. _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CHARACTERISTIC SYMBOL RATING UNIT Q

SEMICONDUCTOR BC807A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to BC817A. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CHARACTERISTIC SYMBOL RATING UNIT

BC807W TRANSISTOR (PNP) BC807-16W SOT-23 BC807-25W BC807-40W FEATURES 1. BASE Ldeally suited for automatic insertion 2. EMITTER epitaxial planar die construction 3. COLLECTOR complementary NPN type available(BC817) MARKING 807-16 5A; 807-25 5B; 807-40 5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltag

BC807 TRANSISTOR (PNP) BC807-16 SOT-23 BC807-25 BC807-40 FEATURES 1. BASE Ldeally suited for automatic insertion 2. EMITTER epitaxial planar die construction 3. COLLECTOR complementary NPN type available(BC817) MARKING 807-16 5A; 807-25 5B; 807-40 5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -

BC8 07 TRANSISTOR (PNP) BC807-16 SOT-23 BC807-25 BC807-40 FEATURES 1. BASE Ldeally suited for automatic insertion 2. EMITTER epitaxial planar die construction 3. COLLECTOR complementary NPN type available(BC817) MARKING 807-16 5A; 807-25 5B; 807-40 5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

BC807-16 BC807-25 BC807-40 1. BASE SOT-23 Transistor (PNP) 2. EMITTER 3. COLLECTOR SOT-23 Features Ldeally suited for automatic insertion epitaxial planar die construction complementary NPN type available(BC817) MARKING 807-16 5A; 807-25 5B; 807-40 5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50

BC807-16W BC807-25W BC807-40W SOT-323 Transistor(PNP) 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features Ldeally suited for automatic insertion epitaxial planar die construction complementary to BC817W MARKING 16W 5A; 25W 5B; 40W 5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Em

BC807-16/-25/-40 PNP General Purpose Amplifier 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A For general AF applications E Complementary NPN type available K B BC817 High collector current J D High current gain G Low collector-emitter saturation voltage H ORDERING INFORMATION C Type No. Marking Package Code BC807-16 5A SOT-23 BC807-25 5B SOT-23 BC8

BC807-16/ BC807-25 BC807-40 COLLECTOR 3 General Purpose Transistor MARKING DIAGRAM 3 PNP Silicon 1 BASE 1 2 2 SOT-23 EMITTER ( T =25 C unless otherwise noted) Maximum Ratings A Symbol Rating Value Unit VCEO -45 V Collector-Emitter Voltage VCBO Collector-Base Voltage -50 V Emitter-Base VOltage VEBO -5.0 V Collector Current-Continuous IC 500 mAdc Thermal Characteristics

BC807-16W BC807-25W BC807-40W COLLECTOR General Purpose Transistor 3 3 PNP Silicon 1 1 P b Lead(Pb)-Free BASE 2 2 EMITTER SOT-323(SC-70) MaximumRatings (TA=25 Cunless otherwise noted) Rating Symbol Value Unit VCEO Collector-Emitter Voltage -45 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage -5.0 V VEBO IC Collector Current-Continuous 500 mA Total Device Diss

WILLAS BC807-xxLT1 General Purpose Transistors PNP Silicon FEATURE Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement BC807 Series. We declare that the material of product compliance with RoHS requirements. SOT 23 RoHS product for packing code suffix "G" Halogen free product for pac

FM120-M WILLAS BC807-40WT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize bo

Spec. No. C905N3 Issued Date 2003.07.29 CYStech Electronics Corp. Revised Date 2005.05.10 Page No. 1/4 General Purpose PNP Epitaxial Planar Transistor BC807N3 Description The BC807N3 is designed for general purpose switching and amplification applications. It is housed in the SOT-23/SC-59 package which is designed for low power surface mount applications. Low

BC807 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features I BC817 C High IC ,complementary pair with BC817. / Applications General power amplifier and switching applications /

BC807 / BC808-AH PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. TO-236 Plastic Package Features AEC-Q101 Qualified and PPAP Capable Halogen and A

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-16LT1G Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. LBC807-40LT1G PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Au

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G PNP Silicon LBC807-40LT1G FEATURE S-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-25LT1G General purpose switching and amplification. S-LBC807-40LT1G PNP complement LBC807 Series. We declare that the material of product complia

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-40WT1G DEVICE MARKING AND ORDERING INFORMATION S-LBC807-40WT1G Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel S-

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-25WT1G S-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement LBC807 Series. 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-25WT1G S-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement LBC807 Series. 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

LESHAN RADIO COMPANY, LTD. LBC807-16DMT1G LBC807-25DMT1G Dual General Purpose Transistors LBC807-40DMT1G PNP Duals S-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements. S-LBC807-25 DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC807-40DMT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Collector current capability IC = -500 mA. LBC807-16WT1G Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-16WT1G General purpose switching and amplification. PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other

LBC807-40WT1G S-LBC807-40WT1G PNP Silicon General Purpose Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G FEATURE LBC807-25LT1G LBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. 3 PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKIN

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G FEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. LBC807-40LT1G General purpose switching and amplification. S-LBC807-16LT1G PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. S-LBC8

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G FEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. LBC807-40LT1G General purpose switching and amplification. S-LBC807-16LT1G PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. S-LBC8

LESHAN RADIO COMPANY, LTD. LBC807-16DMT1G LBC807-25DMT1G Dual General Purpose Transistors LBC807-40DMT PNP Duals S-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements. S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site DMT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC807-4

LESHAN RADIO COMPANY, LTD. LBC807-16DMT1G LBC807-25DMT1G Dual General Purpose Transistors LBC807-40DMT1G PNP Duals S-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements. S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC807-40DMT

SEMICONDUCTOR BC807S TECHNICAL DATA General Purpose Transistors PNP Silicon FEATURE Collector current capability IC = -800 mA. 3 Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. 2 NPN complement BC817 Series. 1 SOT 23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping BC807S-A 5A1 3000/Tape&Reel BC807S-B H5B 3000/Tape&Re

SMD Type Transistors PNP Transistors BC807DS (KC807DS) ( ) SOT-23-6 Unit mm +0.1 0.4 -0.1 6 5 4 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-45V 1 2 3 6 5 4 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 Q2 Q1 1 E1 4 E2 1 2 3 2 B1 5 B2 3 C2 6 C1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

SMD Type Transistors PNP Transistors BC807W (KC807W) Features Ldeally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -5

SMD Type Transistors PNP Transistors BC807 (KC807) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rat

SMD Type Transistors SMD Type PNP Transistors BC807A (KC807A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features For general AF applications. 1 2 High collector current. +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 High current gain. Low collector-emitter saturation voltage. 1.Base 2.Emitter Complementary NPN type available(BC817A) 3.collector Absolute Maximum

PBC807-16W-AU / BC807-25W-AU / BC807-40W-AU Silicon PNP General Purpose Transistors SOT-323 Unit inch(mm) Voltage -45V Current -500mA Features Silicon PNP Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 6124

BC807 16 BC807 40 PNP GENERAL PURPOSE TRANSISTORS 45 Volt POWER 330 mWatt VOLTAGE FEATURES 0.120(3.04) General purpose amplifier applications 0.110(2.80) PNP epitaxial silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) 0.056(1.40) Green molding compound as per IEC61249 Std. . 0.047

KBC807 16/25/40C P N P S i l i c o n T r a n s i s t o r 2018.08.06 2018.08.06 2018.08.06 2018.08.06 1 000 2017.07.22 2 001 2018.01.12 3 BV 002 2018.08.

BC807 PNP Silicon Epitaxial Planar Transistors SOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V V Emitter-Base

R UMW UMW BC807 SOT-23 Plastic-Encapsulate Transistors BC807 TRANSISTOR (PNP) SOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-

BC807/BC808-16/-25/-40 PNP Transistor Features SOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (T =25 , unless otherwisenoted) A Pa

SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050 SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050 SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050

BC807 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 High collector current High current gain Low collector-emitter saturation voltage Complementary types BC817 (NPN) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current C -

www.msksemi.com BC807-16/-25/-40 Semiconductor Compiance Semiconductor Compiance SOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-E

Jingdao Microelectronics co.LTD BC807 BC807 SOT-23 PNP TRANSISTOR 3 FEATURES Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Parameter Symbol Value Unit 1.BASE Collector Base Voltage VCBO -50

BC807 Series TRANSISTOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emi

BC807 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features BC817 ; Complementary to BC817 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

BC807 BC807 BC807 BC807 BC8 0 7 TRANSISTOR(PNP) FEATURES SOT-23 Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction 1 BASE 2 EMITTER For Switching, AF Driver and Amplifier 3 COLLECTOR Applications MARKING BC 807-16 5A Complementary NPN Types Available (BC817) BC807-25 5B BC807-40 5C MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para

RoHS COMPLIANT BC807-16W THRU BC807-40W PNP General Purpose Amplifier Features Capable of 0.2Watts(TA=25 ) of Power Dissipation Collector-current -0.5A Collector-base Voltage -50V Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking BC807-16W 5A BC807-2

RoHS RoHS COMPLIANT COMPLIANT BC807-16Q THRU BC807-40Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marki

RoHS COMPLIANT BC807-16 THRU BC807-40 PNP General Purpose Amplifier Features Capable of 0.3Watts(TA=25 ) of Power Dissipation Collector current -0.5A Collector-base Voltage -50V Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking BC807-16 5A BC807-25 5

BC807 BC807 SOT-23 Plastic-Encapsulate Transistors (PNP) General description SOT-23 Plastic-Encapsulate Transistors (PNP) FEATURES Complementary to BC817 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any DEVICE MARKING CODE Maximum Ratings & Thermal Charact

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC807 FEATURES PNP Low Frequency AmplifierTransistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V -45 V CEO Collector-Base Voltage V -50 V CBO - Emitte

BC807 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to BC817 High Collector Current Epitaxial planar die construction High current gain Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwis

BC807-16 BC807-25 BC807-40 Features Ldeally suited for automatic insertion epitaxial planar die construction complementary NPN type available(BC817) MARKING 807-16 5A; 807-25 5B; 807-40 5C SOT-23 A Dim Min Max C 0.37 0.51 A B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 MAX

INCHANGE Semiconductor isc Silicon PNP General Purpose Transistors BC807-40 DESCRIPTION High current(max. 500mA) Low Voltage(Min. 45V) NPN complement BC817-25 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose switching and amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect