BC847RA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BC847RA 45 V, 100 mA NPN/NPN general-purpose double transistors 14 September 2018 Product data sheet 1. General description NPN/NPN general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement BC857RA NPN/PNP complement BC847RAPN 2. Features and benefits Reduces component count Reduces pick

BC847RAPN 45 V, 100 mA NPN/PNP general-purpose double transistors 14 September 2018 Product data sheet 1. General description NPN/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement BC847RA PNP/PNP complement BC857RA 2. Features and benefits Reduces component count Reduces pick

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846AWT1/D General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, COLLECTOR CWT1 These transistors are designed for general purpose amplifier 3 BC848AWT1,BWT1, applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount applications. CWT1 1 BASE 2 EMITTER MAX

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846ALT1/D BC846ALT1,BLT1 General Purpose Transistors BC847ALT1, NPN Silicon COLLECTOR BLT1,CLT1 thru 3 BC850ALT1,BLT1, 1 CLT1 BASE BC846, BC847 and BC848 are Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS BC847 BC848 BC850 BC849 Rating Symbol BC846 Unit 3 Collector Emitter Voltage VCEO 65 45 30 V 1 C

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC847BPN NPN/PNP general purpose transistor 1999 Apr 26 Preliminary specification Supersedes data of 1997 Jul 09 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistor BC847BPN FEATURES PINNING Low collector capacitance PIN DESCRIPTION Low collector-emitter saturation voltage 1, 4 e

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC847BS NPN general purpose double transistor 1999 Apr 28 Product specification Supersedes the data of 1997 Jul 14 Philips Semiconductors Product specification NPN general purpose double transistor BC847BS FEATURES PINNING Low collector capacitance PIN DESCRIPTION Low collector-emitter saturation voltage 1, 4 e

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BVN NPN/PNP general purpose transistor Product data sheet 2001 Nov 07 Supersedes data of 2001 Aug 30 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN FEATURES PINNING 300 mW total power dissipation PIN DESCRIPTION Very small 1.6 mm x 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 Exce

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC846T; BC847T series NPN general purpose transistors Product specification 2000 Nov 15 Supersedes data of 1999 Apr 26 Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC846; BC847 NPN general purpose transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC846F; BC847F; BC848F series NPN general purpose transistors 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors Preliminary specification NPN general purpose transistors BC846F; BC847F; BC848F series FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Low current (max. 10

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W NPN general purpose transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 27 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATI

BC847/BC547 series 45 V, 100 mA NPN general-purpose transistors Rev. 07 10 December 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in small plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC847 SOT23 - TO-236AB BC857 BC847A BC857A BC847B BC857B BC847B/DG - BC847C BC857C BC847W

BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces

BC847 SMALL SIGNAL NPN TRANSISTORS Type Marking BC847B 1F SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING 2 CIRCUITS LOW LEVEL GENERAL PURPOSE 3 PNP COMPLEMENT IS BC857 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 50 V CES BE V Collector-

BC847B BC847C SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC847B 1F BC847C 1G SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847B - THE PNP COMPLEMENTARY TYPE IS BC857B SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN

BC847BW BC847CW SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC847BW 1FW BC847CW 1GW SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847BW - THE PNP COMPLEMENTARY TYPE IS BC857BW SOT-323 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTORS WITH

TBC847 Bipolar Transistors Silicon NPN Epitaxial Type TBC847 TBC847 TBC847 TBC847 1. Applications 1. Applications 1. Applications 1. Applications Low-Frequency Amplifiers 2. Packaging and Internal Circuit 2. Packaging and Internal Circuit 2. Packaging and Internal Circuit 2. Packaging and Internal Circuit 1. Base 2. Emitter 3. Collector SOT23 3. Absolute Maximum Ratings (

June 2007 BC847BS NPN Multi-chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07. E2 B2 C1 Dual NPN Signal Transister NOTE The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can SC70-6 C2 be of either orientation and will not affect the

BC847S E2 B2 C1 C2 SC70-6 B1 Mark 1C pin #1 E1 NOTE The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Pr

April 2011 BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise BC849, BC850 2 Complement to BC856 ... BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Coll

BC847xQB series 45 V, 100 mA NPN general-purpose transistor Rev. 1 24 January 2020 Product data sheet 1. General description NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface- Mounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC BC847AQB SOT8015 MO-340BA BC85

BC847XQA series 45 V, 100 mA NPN general-purpose transistors Rev. 1 26 August 2015 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package PNP complement Nexperia JEITA

BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 8 20 August 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC847 SOT23 - TO-236AB BC857 BC847A BC857A BC847B BC857B BC847C BC857C BC847

BC847BS 45 V, 100 mA NPN/NPN general-purpose transistor Rev. 03 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement BC857BS. 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely ma

BC847xMB series 45 V, 100 mA NPN general-purpose transistors Rev. 1 5 March 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC BC847AMB SOT883B - - BC857AMB BC847BMB SOT883B -

BC847QAPN 45 V, 100 mA NPN/PNP general-purpose transistor 8 July 2015 Product data sheet 1. General description NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified Low package height of 0.37 mm 3.

BC847DS 45 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 25 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number o

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC847xMB series 45 V, 100 mA NPN general-purpose transistors Rev. 1 5 March 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEITA JEDEC BC847AMB SOT883B - - BC857AMB BC847BMB SOT88

BC847BVN NPN/PNP general purpose transistor 20 May 2019 Product data sheet 1. General description NPN/PNP transistor pair in a SOT666 plastic package. 2. Features and benefits 300 mW total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package Excellent coplanarity due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduced

BC847xMB series 45 V, 100 mA NPN general-purpose transistors Rev. 1 5 March 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC BC847AMB SOT883B - - BC857AMB BC847BMB SOT883B -

BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 8 July 2015 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement BC857QAS. NPN/PNP complement BC847QAPN. 2. Features and benefits Reduces component count Reduces pick and place costs

BC847xW-Q series 45 V, 100 mA NPN general-purpose transistors Rev. 2 24 June 2021 Product data sheet 1. General description NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] Package PNP complement Nexperia JEITA BC847W-Q SOT323 SC-70 BC857W-Q BC847AW-Q BC857AW-Q BC847BW-Q BC857BW-Q

BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 8 20 August 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC847 SOT23 - TO-236AB BC857 BC847A BC857A BC847B BC857B BC847C BC857C BC847

BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 12 24 October 2019 Product data sheet 1. Product profile 1.1. General description NPN general-purpose transistors in a small SOT23 (TO-236AB), very small SOT323 (SC-70) or ultra small SOT883 (DFN1006-3) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] Package PNP complement Nexperia

BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 8 20 August 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC847 SOT23 - TO-236AB BC857 BC847A BC857A BC847B BC857B BC847C BC857C BC847

BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces

NPN EPITAXIAL BC846/847/848/849/850 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE BC849, BC850 Complement to BC856 ... BC860 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO BC846 80 V BC847/850 50 V BC848/849 30 V Collector E

BC 847S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration Package BC 847S 1Cs Q62702-2372 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Symbol Values Unit Collec

BC 847PN NPN/PNP Silicon AF Transistor Array For AF input stages and driver applivations High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package Tape loading orientation PIN Configuration NPN-Transistor 1 = E 2 = B 6 = C PNP-Transistor 4 = E 5 = B 3 = C Type Marking Ordering Code Package BC 847

NPN Silicon AF Transistors BC 846 ... BC 850 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC 856, BC 857, BC 859, BC 860 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 846 A 1As Q62702-C1772 B E C SOT-23 BC 846 B 1Bs Q6

NPN Silicon AF Transistor BC 846 W ... BC 850 W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type Marking Ordering code Pin Configuration Package (tape and reel) 1 2 3 B E C BC 846 AW 1 As Q62702-C2319 SO

BC847B HZG Datasheet NPN General purpose transistor AEC-Q101 Qualified lOutline l SOT-23 Parameter Value VCEO 45V IC 100mA SST3 lFeatures lInner circuit l l 1)BVCEO>45V(IC=1mA) 2)Complements the BC857B HZG. lApplication l AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER lPackaging specifications l Basic Package Taping Reel size Tape width

BC847B / BC847BU3 Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SOT-23 SOT-323 VCEO 45V IC 100mA BC847B BC847BU3 (SST3) (UMT3) lFeatures lInner circuit l l 1)BVCEO>45V(IC=1mA) 2)Complements the BC857B/BC857BU3. lApplication l GENERAL PURPOSE SMALL SIGNAL AMPLIFIER

Transistors BC847B (SPEC-C22) 619

BC847B Transistors NPN General Purpose Transistor BC847B Features External dimensions (Unit mm) 1) BVCEO

BC846W SERIES BC847W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE

BC846W SERIES BC847W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE

BC846W SERIES BC847W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE

BC847AT, BT, CT 45V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 45V Case SOT523 IC = 100mA Collector Current Case Material Molded Plastic. Green Molding Compound. Epitaxial Planar Die Construction UL Flammability Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity Level 1 per J-STD-020 Complementar

BC847BLD SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE Please click here to visit our online spice models database. Features Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for

BC847BVC NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data BVCEO > 45V Case SOT563 Ultra-Small Surface Mount Package Case Material Molded Plastic, "Green" Molding Compound. UL Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Flammability Classification Rating 94V-0 Halogen and Antimony Free. Green Device (Note 3) Moistu

BC847BS DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Ultra-Small Surface Mount Package Case SOT363 Ideally Suited for Automated Insertion Case Material Molded Plastic, Green Molding Compound. UL For switching and AF Amplifier Application Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Notes 1

BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database. Features Ideally Suited for Automatic Insertion SOT-23 Complementary PNP Types Available (BC856-BC858) For Switching and AF Amplifier Applications Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes

BC847BLP 45V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case X1-DFN1006-3 BVCEO > 45V Case Material Molded Plastic, "Green" Molding Compound. IC = 100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 0.60mm2 Package Footprint, 13 ti

BC847BV NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Die Construction SOT-563 C1 B2 E2 Complementary PNP Type Available (BC857BV) Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 B C Lead Free By Design/RoHS Compliant (Note 3) K4V YM "Green" Device (Note 5 and 6) B 1.10 1.25 1.20 E1 B1 C2 C 1.55 1.70 1.60 D Me

BC847AT, BT, CT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Die Construction A SOT-523 Complementary PNP Types Available Dim Min Max Typ C (BC857AT,BT,CT) A 0.15 0.30 0.22 Ultra-Small Surface Mount Package B 0.75 0.85 0.80 Lead Free/RoHS Compliant (Note 2) B C TOP VIEW C 1.45 1.75 1.60 "Green" Device (Note 4 and 5) D 0.50 B

BC847CDLP 45V DUAL NPN SMALL SIGNAL TRANSISTOR Features Mechanical Data BVCEO > 45V Case X2-DFN1310-6 Nominal package height 0.4mm Low profile 0.4mm high package for thin applications Case Material Molded Plastic, Green Molding Compound. Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Full

BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Die Construction Case SOT363 Two Internally Isolated NPN/PNP Transistors in One Package Case Material Molded Plastic, Green Molding Compound. Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface

BC847BLP4 45V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case DFN1006H4-3 Ultra-Small Leadless Surface Mount Package Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Ultra Low Profile (0.4mm max) Moisture Sensitivity Level 1 per J-STD-020 Complement

BC847BVN COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case SOT563 Two Internally Isolated NPN/PNP Transistors in One Package Case Material Molded Plastic, Green Molding Compound. Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully Ro

BC847BFZ 45V NPN SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > 45V Case X2-DFN0606-3 IC = 100mA High Collector Current Case Material Molded Plastic, Green Molding Compound, PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity Level 1

BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Complementary PNP Types BC856 BC858 Case material molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Note

BC847BFA 45V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > 45V Case X2-DFN0806-3 IC = 100mA high Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity Level

BC846 BC847 SOT23 NPN SILICON PLANAR BC848 BC849 GENERAL PURPOSE TRANSISTORS BC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 E C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHAR

BC847PNQ COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case SOT363 stringent requirements of Automotive Applications. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Feat

BC846AW - BC848CW NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automatic Insertion SOT-323 Complementary PNP Types Available (BC856W-BC858W) C Dim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B C B 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 B E D 0.65 Nomina

BC846AW - BC848CW NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features Ideally Suited for Automatic Insertion SOT-323 Complementary PNP Types Available A (BC856W-BC858W) Dim Min Max C A For Switching and AF Amplifier Applications 0.25 0.40 B 1.15 1.35 Mechanical Data B C C 2.00 2.20 Case SOT-323, Molded Plastic D 0.65 Nominal B E Case material - UL Flammability Rating

BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays For AF input stage and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 BC846PN BC846UPN BC847PN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA

BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

BC847...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011) 1 BC847BL3 is not qualified according AEC Q101 Type Marking Pin

BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistors with good matching in one package BC846S / U, BC847S For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified ac

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth BC847BS Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Dual NPN Small Ideally Suited for Automatic Insertion Ultra-Small Surface Mount Package Signal Transistor

MCC Micro Commercial Components TM BC847AT, BT, CT 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 NPN Features Lead Free Finish/RoHS Compliant ("P" Suffix designates Surface Mount Small RoHS Compliant. See ordering information) Epitaxial Die Construction Signal Transistor Complementary PNP Type Avai

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth BC847BS Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Dual NPN Small Ideally Suited for Automatic Insertion Ultra-Small Surface Mount Package Signal Transistor

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth BC847BV Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Epitaxial Die Construction NPN Complementary PNP Type Available (BC857BV) Plastic-Encapsulate Ultra-small Surface Mount Package Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoH

BC847BV Features Epitaxial Die Construction Complementary PNP Type Available BC857BV Ultra-Small Surface Mount Package NPN Halogen Free. Green Device (Note 1) Plastic Encapsulate Moisture Sensitivity Level 1 Amplifier Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Inform

BC847PN Features Ultra-Small Surface Mount Package Halogen Free. Green Device (Note 1) NPN/PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Operating Jun

MCC BC846A TM Micro Commercial Components 20736 Marilla Street Chatsworth THRU Micro Commercial Components CA 91311 Phone (818) 701-4933 BC848C Fax (818) 701-4939 Features NPN Power Dissipation 0.225W (Tamb=25 )(Note 1) Collector Current 0.1A Plastic-Encapsulate Case Material Molded Plastic. UL Flammability Transistors Classification Rating 94V-0 and MSL Rati

MCC BC846AW/BW Micro Commercial Components Micro Commercial Components BC847AW/BW/CW 20736 Marilla Street Chatsworth CA 91311 BC848AW/BW/CW Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Low current (max. 100mA) General Purpose Low voltage (max. 65V) Epo

M C C TM Micro Commercial Components BC846A thru BC849C Static Characteristic h I FE C 10 3000 COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA 18uA 6 16uA T =25 14uA a 12uA 4 100 10uA 8uA 6uA 2 4uA I B=2uA 0 10 0 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR EMITTER VOLTAGE V CE (V) V I

BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-

DATA SHEET www.onsemi.com Dual General Purpose Transistors SOT-363/SC-88 CASE 419B NPN Duals STYLE 1 BC846BDW1, BC847BDW1, (3) (2) (1) BC848CDW1 These transistors are designed for general purpose amplifier Q1 Q2 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (4) (5) (6) Features S and NSV Prefixes for Automotiv

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q

BC846ALT1G Series General Purpose Transistors NPN Silicon Features www.onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device

General Purpose Transistors NPN Silicon BC846ALT1G Series Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose http //onsemi.com Transistors NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for Q1 Q2 low power surface mount applications. Lead-Free Solder Plating (4) (5) (6) MAXIMUM RATINGS BC847CDXV6T1 Rating Symb

BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR ESD Rating - Machine Model >400 V 3 AEC-Q101 Qualified and PPAP Capable 1 S Prefix for Automotive and Other Applications Requiring Unique BASE Site and Control Change Requirements

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

BC847ATT1, BC847BTT1, BC847CTT1 General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-75/SOT-416 package which COLLECTOR is designed for low power surface mount applications. 3 Features 1 NSV Prefix for Automotive and Other Applications Requiring BASE Unique Site and Control

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Appli

BC846ALT1G Series General Purpose Transistors NPN Silicon Features www.onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon SBC847BLT1G Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V 3 We declare that the material of product compliance with RoHS requirements. 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit SOT 23 Collector Emitter Voltage VCEO 45 Vdc 3 COLLECT

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap

BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise BC850 2 Complement to BC856, BC857, BC858, BC859, and BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Marking Package Packing Method BC846AMTF 8A

BC847ATT1, BC847BTT1, BC847CTT1 General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-75/SOT-416 package which COLLECTOR is designed for low power surface mount applications. 3 Features 1 NSV Prefix for Automotive and Other Applications Requiring BASE Unique Site and Control

BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR 3 ESD Rating - Machine Model >400 V Pb-Free Packages are Available 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO V

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors http //onsemi.com NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. Q1 Q2 Features These are Pb-Free Devices (4) (5) (6) BC847CDXV6T1 MAXIMUM RATINGS Rating Symb

BC847ATT1, BC847BTT1, BC847CTT1 General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-75/SOT-416 package which COLLECTOR is designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available* BASE 2 EMITTER MAXIMUM RATINGS (TA = 25 C) Rating S

BC847ATT1, BC847BTT1, BC847CTT1 General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-75/SOT-416 package which COLLECTOR is designed for low power surface mount applications. 3 Features 1 BASE Pb-Free Packages are Available* 2 EMITTER MAXIMUM RATINGS (TA = 25 C) Rating

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q

BC847BM3T5G Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-723 package which is designed for low power surface mount applications. http //onsemi.com This is a Pb-Free Device COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Max Unit 1 Collector-Emitter Voltage V

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q

BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363 CASE 419B S and NSV Prefixes for Automotive and Other Applications STYLE 1 Requiring Unique Site and

BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-7

BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-

BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-7

BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER MAXIMUM

BC846ALT1G Series General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR 3 ESD Rating - Machine Model >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap

BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-7

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Appli

BC847BM3T5G Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-723 package which is designed for low power surface mount applications. http //onsemi.com This is a Pb-Free Device COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Max Unit 1 Collector-Emitter Voltage V

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q

BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR 3 ESD Rating - Machine Model >400 V Pb-Free Packages are Available 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO V

BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

Dual General Purpose Transistors NPN Duals BC846BDW1, BC847BDW1, BC848CDW1 www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363/SC-88 S and NSV Prefixes for Automotive and Other Applications CASE 419B STYLE 1 Requiring Unique Si

BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G Dual General Purpose Transistors http //onsemi.com NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Q1 Q2 Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (4) (5) (6) Com

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap

BC847BPDXV6T1, BC847BPDXV6T5 Dual General Purpose Transistor NPN/PNP Dual (Complementary) http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Lead-Free Solder Plating MAXIMUM RATINGS - NPN Q1 Q2 Rating Symbol Value Unit Collector-Emitter Vol

BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-

BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap

BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363 CASE 419B S and NSV Prefixes for Automotive and Other Applications STYLE 1 Requiring Unique Site and

f BC847UF Semiconductor Semiconductor NPN Silicon Transistor Descriptions General purpose application Switching application Features High voltage VCEO=45V Complementary pair with BC857UF Ordering Information Type NO. Marking Package Code BC847UF CS SOT-323F hFE rank Outline Dimensions unit mm 1.95 2.25 1.20 1.40 1 3 2 PIN Conne

BC847 NPN Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage VCEO=45V 2 Complementary pair with BC857 SOT-23 Ordering Information Type NO. Marking Package Code RR BC847 SOT-23 Device Code hFE Rank Year&Week Code Absolute maximum ratin

BC847U NPN Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage VCEO=45V 2 Complementary pair with BC857U Ordering Information SOT-323 Type NO. Marking Package Code CS BC847U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum ra

BC846 BC847 BC848 NPN Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) SOT-23 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL BC846 BC847 BC848 UNITS DESCRIPTION VCBO Collector Base Voltage 80 50 30 V Collector Emmitter Voltage (VBE = 0V) VCES 80 50 30 V VCEO Collector Emitt

BC847BCSM Dimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar NPN Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 45V A = (0.04 0.004

BC847BV Dual NPN Transistors Elektronische Bauelemente Plastic-Encapsulate Transistors SOT-563 RoHS Compliant Product FEATURES .002(0.05) .012(0.30) .051(1.30) .000(0.00) .004(0.10) .043(1.10) * Epitaxial Die Construction * Complementary PNP Type Available (BC857BV) .022(0.55) .018(0.45) .067(1.70) Ultra-Small Surface Mount Package * .059(1.50) .011(0.27) .007(0.17) .067

BC847S NPN Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product SOT-363 o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF * Features (0.525)REF .053(1.35) .096(2.45) Power dissipation .045(1.15) .085(2.15) O PCM 0.3 W (Tamp.= 25 C) Collector current .018(0.46) .010(0.26) ICM 0.2 A .014(0.35) .006(0.15) .006(0.15) .003(0.08) Col

BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM 0.2 W (Temp. = 25 C) Collector Current ICM 0.1A Collector-base Voltage V(BR)CBO 50/-50 V Operating & Storage Junction Tem

BC846AW,BW BC847AW, BW, CW Elektronische Bauelemente BC848AW, BW, CW NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications Base Emitter Collector SOT-323 A L Collector 3 3 MARKING Top View C B

BC847AT /BC847BT /BC847CT NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Ideally suited for automatic insertion SOT-523 For Switching and AF Amplifier Applications Base Emitter A Collector M MARKING 3 3 Product Marking Code Top View C B 1 1 2 BC847AT 1

BC846A, B BC847A, B, C Elektronische Bauelemente BC848A, B, C A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES A Dim Min Max L n A 2.800 3.040 General Purpose Transistor NPN Type n 3 B 1.200 1.400 Collect current 0.1A S Top View O O B n C 0.890 1.110 Operating Temp. -55 C +150 C 1 2 n D 0.370 0.500 RoHS compliant product V G G 1.780 2.040 H 0.013

BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product 200mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) under plate - Pb free and RoHS compliant - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halo

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 NPN Formed SMD Package Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G BC847W =1H BC848W =1M General Purpose Switching and Amplification. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified other

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 PIN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER SOT-23 3 = COLLECTOR 3 Formed SMD Package For Lead Free Parts, Device Part # will be Prefixed with "T" 1 2 Marking BC846 =1D BC846A=1A BC846B=1B BC847 =1H BC847A=1E BC847B=1F BC8

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors BC846W TRANSISTOR (NPN) BC847W SOT-323 BC848W 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC846W

JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors JC T BC847S DUAL TRANSISTOR (NPN+NPN) SOT-363 APPLICATION This device is designed for general purpose amplifier applications Marking 1C MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 4

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) BC847PN SOT-363 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING 7P MAXIMUM RATINGS TR1 (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) BC847BVN SOT-563 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING KAW MAXIMUM RATINGS TR1 (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Em

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors BC847T TRANSISTOR (NPN) SOT-523 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MARKING BC847AT=1E; BC847BT=1F; BC847CT=1G MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VC

www.jscj-elec.com AD-BC846/47/48 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-BC846/47/48 Series Plastic-Encapsulated Transistor AD-BC846/47/48 series Transistor (NPN) FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications AEC-Q101 qualified MARKING AD-BC846-A = 1A; AD-BC846-B = 1B AD-BC847-A = 1E; AD-BC8

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846 TRANSISTOR (NPN) SOT-23 BC847 BC848 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base V

SEMICONDUCTOR BC846W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 High Voltage BC846W VCEO=65V. _ + B 1.25 0.15 _ + C 0.90 0.10 For Complementary With PNP Type BC856W/857W/858W. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.0

SEMICONDUCTOR BC846/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Voltage BC846 VCEO=65V. C 1.30 MAX 2 For Complementary With PNP Type BC856/857/858. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 L 0.55

BC847BV DUAL TRANSISTOR (NPN) SOT-563 FEATURES Epitaxial Die Construction Complementary PNP Type Available (BC857BV) Ultra-Small Surface Mount Package Marking K4V MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collector Current -C

BC847S Multi-chip transistor (NPN) SOT-363 APPLICATION C1 B2 E2 This device is designed for general purpose amplifier applications Marking 1C E1 B1 C2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 200 mA

BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter Vo

BC846A,B / BC847A, B, C / BC848A, B, C TRANSISTOR (NPN) SOT-23 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter Voltage V

BC847BV SOT-563 Dual Transistor (NPN) SOT-563 1.600 1.200 Features 1.600 Epitaxial Die Construction 0.220 Complementary PNP Type Available (BC857BV) 0.500 Ultra-Small Surface Mount Package 0.565 Marking K4V Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCE

BC847PN Complementary Transistor(PNP and NPN) SOT-363 Features Epitaxial Die Construction Two internal isolated NPN/PNP Transistors in one package MAKING 7P Dimensions in inches and (millimeters) MAXIMUM RATINGS TR1 (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base V

BC846AW,BW BC847AW,BW,CW BC848AW,BW,CW STO-323 Transistor(NPN) 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC846W 80 BC847W 50 V BC8

BC847AT/BT/CT SOT-523 Transistor(NPN) SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING BC847AT=1E; BC847BT=1F; BC847CT=1G Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VC

BC846A,B BC847A,B,C BC848A,B,C SOT-23 Transistor(NPN) 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848

BC846BDW Series General Purpose Transistor 2 1 3 6 5 4 NPN Duals 1 2 P b Lead(Pb)-Free 3 4 5 6 SOT-363(SC-88) NPN+NPN Maximum Ratings BC846 BC847 Rating Symbol BC848 Unit 65 45 Collector-Emitter Voltage V 30 CEO Vdc 80 50 Collector-Base Voltage VCBO 30 Vdc 6.0 Emitter-Base Voltage VEBO 6.0 5.0 Vdc Collector Current-Continuous IC 100 100 100 mAdc Thermal Characteri

BC847S 2 1 3 Dual General Purpose Transistor 6 5 4 NPN Silicon 1 2 3 P b Lead(Pb)-Free 4 5 6 SOT -363(SC-88) NPN+NPN Maximum Ratings Rating Unit Symbol Value Collector-Emitter Voltage V CEO V 45 Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC mA 200 Thermal Characteristics Characteristics Symbol Max Unit mW Total Dev

BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor COLLECTOR 3 3 NPN Silicon P b Lead(Pb)-Free 1 1 2 BASE 2 EMITTER SOT-323(SC-70) Maximum Ratings (T =25 C Unlesso therwise noted) A Rating Symbol Value Unit Collector-Emitter Voltage BC846 65 45 V BC847 CEO V 30 BC848 Collector-Base Voltage BC846 80 V V BC847 CBO 50 BC848 30 Emitter-Base Voltag

BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 XX = Device 1 1 Code (See 2 BASE Table Below) SOT-23 *Moisture Sensitivity Level 1 1 2 *ESD Rating - Human Body Model >4000V 2 EMITTER -Machine Model >400V ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emi

BC846BPDW Series NPN/PNP Dual General Purpose Transistors 2 1 3 P b Lead(Pb)-Free 6 5 4 1 2 3 4 5 6 NPN+PNP SOT-363(SC-88) MAXIMUM RATINGS - NPN Rating Symbol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current - Continuous IC 100 100 100 mAdc MAXIMUM RATINGS - PNP

BC847AT/BT/CT COLLECTOR 3 General Purpose Transistor 3 3 1 NPN Silicon 2 1 BASE SC-89 (SOT-523F) 2 EMITTER ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit V 45 Collector-Emitter Voltage CEO Vdc VCBO 50 Vdc Collector-Base Voltage VEBO 6.0 Emitter-Base Voltage Vdc mAdc Collector Current-Continuous IC 100 Thermal Characteristics Character

BC8 6A/BLT1 FM120-M BC8 7A/B/CLT1 WILLAS THRU BC8 8A/B/CLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface

Spec. No. HE6827 HI-SINCERITY Issued Date 1993.11.28 Revised Date 2004.09.01 MICROELECTRONICS CORP. Page No. 1/4 HBC847 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC847 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors BC846A,B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCB

Spec. No. C202S6R Issued Date 2010.03.22 CYStech Electronics Corp. Revised Date 2011.02.22 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8471S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

Spec. No. C202S6R Issued Date 2010.03.22 CYStech Electronics Corp. Revised Date 2011.02.22 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8472S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

Spec. No. C907N3 Issued Date 2003.07.31 CYStech Electronics Corp. Revised Date 2010.07.21 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BC847N3 Description The BC847N3 is designed for general purpose switching and amplification applications. Complementary to BC857N3. Pb-free package Features Low current, I =100mA C(max) Low volt

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors BC846A,B TRANSISTOR(NPN) SOT-23 BC847A,B,C BC848A,B,C 1 BASE 2 EMTTER FEATURES 3 COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS(TA=25 unless other

BC847 Rev.FApr-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , BC857 High voltage, complementary pair with BC857. / Applications General purpose application and switching application. /

BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G CWT1G ( ) ORDERING INFORMATION Pb Free S-LBC846AWT1G,BWT1G Device Package Shipping S-LBC847AWT1G,BWT1G LBC846AWT1G SC-70 3000/Tape&Reel S-LBC846AWT1G CWT1G LBC846AWT3G SC-70

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) LBC846BPDW1T1G These transistors are designed for general purpose amplifier LBC847BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC847CPDW1T1G designed for low power surface mount applications. LBC848BPDW1T1G LBC848CPDW1T1G We declare that the material of product comp

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G NPN Duals LBC847BDW1T1G LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CDW1T1G designed for low power surface mount applications. We declare that the material of product compliance wit

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V Series ESD Rating Machine Model >400 V We declare that the material of product compliance with RoHS S-LBC846ALT1G requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Co

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATIO

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V S-LBC846ALT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chan

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

LBC847BN3T5G S-LBC847BN3T5G General Purpose Transistors NPN Silicon 1. FEATURES SOT883 Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V Machine Model >400 V 3 COLLECTOR We declare that the material of product compliance with RoHS requirements and Halogen Free. 1 BASE S- prefix for automotive and other applications requiring unique sit

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control C

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G NPN Silicon We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC847ATT1G These transistors are designed for general purpose amplifier S-LBC847ATT1G applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Series Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

LBC847BDW1T1G S-LBC847BDW1T1G NPN Dual General Purpose Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring SC88(SOT-363) unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC847ATT1G These transistors are designed for general purpose amplifier S-LBC847ATT1G applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Series Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G LBC847BDW1T1G NPN Duals LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CDW1T1G designed for low power surface mount applications. S-LBC846ADW1T1G We declare that the material of produ

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V S-LBC846ALT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chan

SEMICONDUCTOR BC847E TECHNICAL DATA General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package which is designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available 2 MAXIMUM RATINGS (TA = 25 C) SC-89 Rating Symbol Max Unit Collector-Emitter Voltage

SMD Type Transistors NPN Transistors BC846W,BC847W,BC848W (KC846W,KC847W,KC848W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BC846W 80 Collector - Base Voltage BC847W VCBO 50 BC848W 30 BC846W 65 Collector - Emitter Volt

SMD Type Transistors Transistors NPN Darlington Transistor BC847BVN(KC847BVN) Features Unit mm SOT-563 1.20 0.10 0.05 (max) Epitaxial Die Construction 0.20 0.10 Complementary PNP Type Available 4 3 (BC857BVN) 5 2 Ultra-Small Surface Mount Package 6 1 1.60 0.10 0.525 0.60 7 REF. 7 REF. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Coll

SMD Type Transistors NPN Transistors BC847T (KC847T) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 2 1 Features Ideally suited for automatic insertion 3 For Switching and AF Amplifier Applications 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec

SMD Type Transistors NPN Transistors BC846 BC848 (KC846 KC848) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Ideally suited for automatic insertion For switching and AF amplifier applications 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC846 BC847 BC848 Unit C

SMD Type Transistors Composite Transistors BC847BPN (KC847BPN) Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors C1 B2 E2 0.5 mm (min) PNP NPN E1 B1 C2 1.9 mm Absolute Maximum Ratings Ta = 25 Parame

BC846AW BC850CW NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER VOLTAGE 250 mWatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic Terminals Solderable per

BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volt POWER 330 mWatt FEATURES General purpose amplifier applications 0.120(3.04) 0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20

BC847BS-AU NPN GENERAL PURPOSE DUAL TRANSISTOR VOLTAGE 45 Volt POWER 150 mWatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Acquire quality system certificate TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DAT

BC846AW-AU BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER 250 mWatt VOLTAGE FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic

BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volt POWER 330 mWatt FEATURES 0.120(3.04) General purpose amplifier applications 0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . 0.056(1.40) (Ha

BC847BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimentary pair (NPN and PNP) general-purpose transistors. This device is ideal for portable SOT- 363 applications where board space is at a premium. 4 4 5 5 FEATURES 6 6 3 3 Electrically-Isolated Complimentary Transistor Pairs 2 2 Lead free in compliance with EU Ro

Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM 0.20W (@TA=25 C) SOT-23 -Collector current ICM 0.1A -Collector-base voltage 0.118(3.00) 0.110(2.80) VCBO BC846=80V 3 BC847=50V 0.055(1.40) BC848=30V 0.047(1.20) -Operating and storage junction temperature 1 2 O range TJ, TSTG= -65 to +150 C 0.079(2.00) 0.071(1.80)

Small Signal Transistor BC846AW-G Thru. BC848CW-G (NPN) RoHS Device Features -Power dissipation PCM 0.15W (@TA=25 C) SOT-323 -Collector current ICM 0.1A 0.087 (2.20) -Collector-base voltage 0.079 (2.00) VCBO BC846W=80V 3 BC847W=50V 0.053(1.35) BC848W=30V 0.045(1.15) -Operating and storage junction temperature 1 2 range TJ, TSTG= -55 to +150 C 0.006 (0.15) 0.055

Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM 0.20W (@TA=25 C) SOT-23 -Collector current ICM 0.1A -Collector-base voltage 0.118(3.00) 0.110(2.80) VCBO BC846=80V 3 BC847=50V 0.055(1.40) BC848=30V 0.047(1.20) -Operating and storage junction temperature 1 2 O range TJ, TSTG= -65 to +150 C 0.079(2.00) 0.071(1.80)

Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM 0.20W (@TA=25 C) SOT-23 -Collector current ICM 0.1A -Collector-base voltage 0.118(3.00) 0.110(2.80) VCBO BC846=80V 3 BC847=50V 0.055(1.40) BC848=30V 0.047(1.20) -Operating and storage junction temperature 1 2 O range TJ, TSTG= -65 to +150 C 0.079(2.00) 0.071(1.80)

Small Signal Transistor BC846AW-G Thru. BC848CW-G (NPN) RoHS Device Features -Power dissipation PCM 0.15W (@TA=25 C) SOT-323 -Collector current ICM 0.1A 0.087 (2.20) -Collector-base voltage 0.079 (2.00) VCBO BC846W=80V 3 BC847W=50V 0.053(1.35) BC848W=30V 0.045(1.15) -Operating and storage junction temperature 1 2 range TJ, TSTG= -55 to +150 C 0.006 (0.15) 0.055

Dual General Purpose Transistors Dual General Purpose Transistors NPN/PNP Duals (Complimentary) DBC846BPDW1T1G DBC847BPDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is DBC847CPDW1T1G designed for low power surface mount applications. DBC848BPDW1T1G We declare that the material of product compliance wit

BC846W-BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Voltage

BC846 BC848 NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor www.slkormicro.com 1 BC846 BC848 www.slkormicro.com 2 BC846 BC848 www.slkormicro.com 3 BC846 BC848 www.slkormicro.com 4

SUNROC BC846A,B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter V

R UMW UMW BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collect

BC846/BC847/BC848 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES Ideally suited for automatic insertion SOT-23 For switching and AF amplifier applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (T a=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter Volta

BC846-8 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking BC846A=1A;BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J;BC848B=1K;BC848C=1L; C B E Symbol Parameter Value Unit V VCBO Collector-Base Voltage 80 BC846 BC847 50 30

BC847 SOT-23 Plastic-Encapsulate Transistor SOT-23 BC846A, B TRANSISTOR (NPN) BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton Size Q'TY/Carton Package Reel Size (pcs) (pcs) (mm) (mm) (mm) (pcs) S

BC846/847/848/849/850 TRANSISTOR NPN FEATURES Low current (max. 100 mA) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. 1.Base 2.Emitter 3.Collector DESCRIPTION SOT-23 Plastic Package NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/860. ABSOLUTE MAXIMUM RATINGS (T =25 C) A Parameter Symbol Val

BC846/7/8 TRANSI STOR (NPN) BC846 BC847 BC848 Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Ideaiiy suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage 80 BC846 VCBO 50 V BC847 30 BC848 Collector-Emitter Voltage 6

BC846/BC847/BC848 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications Marking Mechanical Data BC846A=1A BC846B=1B Small Outline Plastic Package BC847A=

BC846-BC850 BC846/847/848/849/850 TRANSISTOR NPN FEATURES SOT-23 Low current (max. 100 mA) Low voltage (max. 65 V). 1 BASE 2 EMITTER APPLICATIONS 3 COLLECTOR General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/860. ABSOLUTE MAXIMUM RATINGS (T =25 C) A Parameter Sy

BC846 THRU BC850 BC846 THRU BC850 BC846 THRU BC850 BC846 THRU BC850 BC8 46 THRU BC8 50 TRANSISTOR(NPN) FEATURE Low current (max. 100 mA) SOT-23 Low voltage (max. 65 V). 1 BASE APPLICATIONS 2 EMITTER General purpose switching and amplification. 3 COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/86

SHANGHAI June 2009 MICROELECTRONICS CO., LTD. SEBC847BU/SEBC847CU NPN General Purpose Transistor Revision A External dimensions (Units mm) Features BVCEO

RoHS COMPLIANT BC847BS Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking 1C Equivalent circuit 1 / 5 S-S2531 Yangzhou Y

RoHS COMPLIANT BC847PN Dual NPN+PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN/PNP Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking 7P Equivalent circuit Ordering Information

RoHS RoHS COMPLIANT COMPLIANT BC846/BC847/BC848 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K BC848C=1L Maximum Ratings (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage 80 BC84

RoHS COMPLIANT BC846Q THRU BC848Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J

RoHS RoHS COMPLIANT COMPLIANT BC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL

BC846/BC847/BC848 BC846/BC847/BC848 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING CODE

Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) SOT-363 FEATURES Epitaxial Die Construction (BC847W+BC857W) Two isolated NPN/PNP Transistors in one package MAKING 7P MAXIMUM RATINGS TR1 (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collecto

BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856...BC860 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Units Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collec

SOT-363 Plastic-Encapsulate Transistors BC847DW DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors MARKING BC847A 1Et BC847B 1Ft BC847C 1Gt MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846 BC847 BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B, BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC846/847/848 MAXIMUM RATINGS Characteristic Symbol Unit (BC846A,B) (BC847A,B,C) (BC848A,B,C) Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base Voltage V 80 50 30 Vdc CBO Emitter-Base Voltage

BC847 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to BC857 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe

Plastic-Encapsulate Transistors FEATURES (NPN) BC846A/B For general AF applications (NPN) BC847A/B/C High collector current (NPN) BC848A/B/C High current gain Low collector-emitter saturation voltage Marking BC846A BC846B BC847A BC847B 1A 1B 1E 1F BC847C BC848A BC848B BC848C 1. BASE 2. EMITTER SOT-23 1G 1J 1K 1L 3. COLLECTO MAXIMUM RATINGS (TA=25 unless otherwise noted) Par

BC846A,B BC847A, B, C BC848A, B, C Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 A Dim Min Max DEVICE MARKING C A 0.37 0.51 BC846A=1A; BC846B=1B; B C B 1.20 1.40 BC847A=1E; BC847B=1F; BC847C=1G; C 2.30 2.50 TOP VIEW B E BC848A=1J; BC848B=1K BC848C=1L D 0.89 1.03 D E

isc Silicon NPN Plastic-Encapsulate Transistors BC847 DESCRIPTION DC Current Gain- h =110-800 @I = 2mA FE C Collector-Emitter Breakdown Voltage- V = 45V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ideally suited for automatic insertion. For switching and AF amplifier applications. ABSOLUTE MAXIMUM RATIN