BCX56T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BCX56T series 80 V, 1 A NPN power bipolar transistors Rev. 1 22 August 2019 Product data sheet 1. Product profile 1.1. General description NPN power transistors in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC BCX56T SOT89 SC-62 BCX53T BCX56-10T BCX53-10T BCX56-16T

BCX54 /55 /56 NPN MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data BVCEO > 45V, 60V & 80V Case SOT89 Ic = 1A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound; ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 BCX54; BCX55; BCX56 NPN medium power transistors 1999 Apr 19 Product specification Supersedes data of 1997 Mar 24 Philips Semiconductors Product specification NPN medium power transistors BCX54; BCX55; BCX56 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector APP

BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors Rev. 08 22 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC639[2] SOT54 SC-43A TO-92 BC640 BCP56 SOT223 SC-73 - BCP53 BCX56 SOT89 SC-62 TO-243 BCX53 [1] Valid for all available sel

BCP56; BCX56; BC56PA 80 V, 1 A NPN medium power transistors Rev. 9 25 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BCP56 SOT223 SC-73 - BCP53 BCX56 SOT89 SC-62 TO-243 BCX53 BC56PA SOT1061

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

NPN Silicon AF Transistors BCX 54 BCX 56 Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types BCX 51 BCX 53 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCX 54 BA Q62702-C954 B C E SOT-89 BCX 54-10 BC Q62702-C1861 BCX 54-16 BD Q62702-C1731 BCX 55 BE Q62702-C1729

BCX54 SOT89 NPN SILICON PLANAR BCX55 MEDIUM POWER TRANSISTORS BCX56 ISSUE 3 FEBRUARY 1996 PARTMARKING DETAILS - C BCX54 BA BCX54-10 BC BCX54-16 BD BCX55 BE BCX55-10 BG BCX55-16 BM BCX56 BH BCX56-10 BK BCX56-16 BL E COMPLEMENTARY TYPES - C BCX54 BCX51 BCX55 BCX52 BCX56 BCX53 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCX54

BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data Case SOT89 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material Molded Plastic, Green Molding Compound stringent requirements of Automotive Applications. UL Flammability Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Features Terminals Ma

BCX54 ...- BCX56... NPN Silicon AF Transistors 1 For AF driver and output stages 2 High collector current 3 2 Low collctor-emitter saturation voltage Complementary types BCX51...BCX53 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCX54-16 BD 1=B 2=C 3=E SOT89 BCX55 BE 1=B 2=C 3=E SOT89 BCX55-16

BCX56/BCX56-10/BCX56-16 Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO 100 IC=100 A, IE=0 Collector-Base Breakdown Voltage V V(BR)CEO IC=10mA, IB=0 Collector-Emitter Breakdown Voltage 80 V V(BR)EBO IE=10 A, IC=0 Emitter-Base Breakdown Voltage 5 V ICBO VCB=30V, IE=0 Collector-Base Cutoff Current 0.1 A IEBO VEB=

BCX56 NPN Transistors Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product 1 SOT-89 2 3 1.BASE 4.4 4.6 2.COLLECTOR 1.4 1.8 1.4 1.6 3.EMITTER Features Power dissipation 0.36 0.56 PCM 1. 2 W (Tamb=25o ) C Collector current 0.32 0.52 0.35 0.44 1.5Ref. ICM 1 A 2.9 3.1 Collector-base voltage V(BR)CBO 100 V Dimensision in Millimeter Op

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR PNP Complements to BCX51,BCX52,BCX53 Low Voltage 3. EMITTER High Current APPLICATIONS Driver Stages of Audio Amplifiers MARKING BCX54 BA, BCX54-10 BC, BCX54-16 BD BCX55 BE, BCX55-10 BG, BCX55-16B

BCX54 ,BCX55,BCX56 TRANSISTOR (NPN) SOT-89-3L FEATURES PNP Complements to BCX51,BCX52,BCX53 1. BASE Low Voltage High Current 2. COLLECTOR 3. EMITTER APPLICATIONS Driver Stages of Audio Amplifiers MARKING BCX54 BA, BCX54-10 BC, BCX54-16 BD BCX55 BE, BCX55-10 BG, BCX55-16BM BCX56 BH, BCX56-10 BK, BCX56-16 BL MAXIMUM RATINGS (Ta=25 unless otherwise noted) S

BCX54-BCX56 NPN Silicon AF Transistors SOT-89 4.6 B 4.4 1.6 1.8 1.4 1.4 Features 2.6 4.25 2.4 3.75 For AF driver and output stages 0.8 MIN 0.53 High collector current 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 Low collector-emitter saturation voltage 3.0 Complementary types BCX51 BCX53(PNP) Dimensions in inches and (millimeters) Ordering Information T

BCX54/BCX55/BCX56 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. BASE 1 2. COLLECTOR 2 3 FEATURES 3. EMITTER High current SOT-89 Low voltage Medium power general purposes Driver stages of audio amplifiers. MAKING BCX54 BA BCX54-10 BC BCX54-16 BD BCX55 BE BCX55-10 BG BCX52-16 BM BCX56 BH BCX56-10 BK BCX56-16 BL MAXIMUM RATINGS (TA=25 unless otherwise noted)

BCX56 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. BASE 1 2. COLLECTOR 2 3 3. EMITTER SOT-89 MAXIMUM RATINGS ( TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 100 Collector-Base Voltage V VCEO 80 V Collector-Emitter Voltage VEBO V Emitter-Base Voltage 5.0 IC Collector Current Continuous 1.0 A PD mW Total Device Dissipation TA=25 C 500 +150 C

FM120-M BCX55 WILLAS THRU SOT-89 Plastic-Encapsulate Transistors BCX56 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

Spec. No. C304M3 Issued Date 2007.04.23 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 100V IC 1A BCX56M3 VCESAT 0.13V(typ.) Features High breakdown voltage, BV 100V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BCX53M3

BCX56U NPN Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICM 1.5 A 0.5 1) Total Power Dissipation Ptot W 1.3 2) Junction Temperature Tj 150 Sto

BCX56U NPN Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICM 1.5 A 0.5 1) Total Power Dissipation Ptot W 1.3 2) Junction Temperature Tj 150 Sto

SEMICONDUCTOR BCX54 BCX56 TECHNICALDATA BCX54,BCX55,BCX56 TRANSISTOR (NPN) FEATURES SOT-89-3L PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current 1. BASE 2. COLLECTOR APPLICATIONS 3. EMITTER Driver Stages of Audio Amplifiers MARKING BCX54 BA, BCX54-10 BC, BCX54-16 BD BCX55 BE, BCX55-10 BG, BCX55-16BM BCX56 B H, BCX56-10 BK, BCX56-16 BL MAXIMUM RATI

SMD Type Transistors NPN Transistors BCX54,BCX55,BCX56 (KCX54 ,KCX55,KCX56) 1.70 0.1 Features High current (max. 1 A). Low voltage (max. 80 V). 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage BCX54 VCBO 45 V BCX55 60 V BCX56 100 V Collector-emitter voltage BCX54 VCEO 45 V BCX55 60 V BCX56 80

PBCX56-16-AU NPN Low Vce(sat) Transistor SOT-89 Unit inch(mm) Voltage 100V Current 1A Features Silicon NPN epitaxial type Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA High collector current capability Excellent DC current gain characteristics AEC-Q101 qualified Lead free in comply with EU RoHS 2.0 Green molding compound as per IEC61249 Standar

BCX54/BCX55/BCX56 NPN Silicon AF Transistors FEATURES For AF driver and output stages Pb High collector current Lead-free Low collector-emitter saturation voltage Complementary types BCX51 BCX53(PNP) SOT-89 ORDERING INFORMATION Type No. Marking Package Code BCX54 BA SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 BCX55 BE SOT-89 BCX55-10 BG SOT-89

BCX54/BCX55/BCX56 NPN Transistors Features High current (max. 1 A). Low voltage (max. 80 V). 3 2 1.Base 2.Collector 1 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage BCX54 VCBO 45 V BCX55 60 V BCX56 100 V Collector-emitter voltage BCX54 VCEO 45 V BCX55 60 V BCX56 80 V Emitter-base voltage VEBO 5 V

BCX56SQ NPN Transistor SOT-89 Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbol Value Units Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5 V Collector Current I 1 A C Peak Collector Curr

BCX54,BCX55,BCX56 TRANSISTOR(NPN) SOT-89-3L SOT-89-3LPlastic-Encapsulate Transistors SOT-89-3L Features BCX51,BCX52,BCX53 ; Complementary to BCX51, BCX52,BCX53 500mW; Power Dissipation of 500mW High Stability and High Reliability Mechanical Data SOT-89-3L SO

BCX54 THRU BCX56 BCX54 THRU BCX56 BCX54 THRU BCX56 BCX54 THRU BCX56 BCX54 THRU BCX56 TRANSISTOR(NPN) FEATURE SOT-89 PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS Driver Stages of Audio Amplifiers MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit BCX54 45 VCBO Collector-Base Vo

RoHS COMPLIANT BCX56-16Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 Low collector-emitter saturation voltage Part no. with suffix Q means AEC-Q101 qualified Mechanical Data Package SOT-89 Molding compound meet

BCX54-BCX56 SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR PNP Complements to BCX51,BCX52,BCX53 Low Voltage 3. EMITTER High Current APPLICATIONS Driver Stages of Audio Amplifiers MARKING BCX54 BA, BCX54-10 BC, BCX54-16 BD BCX55 BE, BCX55-10 BG, BCX55-16BM BCX56 B H, BCX56-10 BK, BCX56-16 BL MAXIMUM RATINGS (Ta=25 unless otherwise noted)

BCX56 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to BCX53 High Current Low Voltage For Stages of Audio Amplifiers Application Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise note

Plastic-Encapsulate Transistors BCX54/BCX55/BCX56 FEATURES (NPN) For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types BCX51 BCX53(PNP) ORDERING INFORMATION Type No. Marking Package Code 1. BASE BCX54 BA SOT-89 2. COLLECTO SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 3. EMITTER BCX55 BE SOT-89

YFSEMI ELECTRON NPN Silicon AF Transistors BCX54/BCX55/BCX56 FEATURES For AF driver and output stages Pb High collector current Lead-free Low collector-emitter saturation voltage Complementary types BCX51 BCX53(PNP) SOT-89 ORDERING INFORMATION Type No. Marking Package Code BCX54 BA SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 BCX55 BE S

1 Jiangsu Weida Semiconductor Co., Ltd. NPN Transistors BCX54,BCX55,BCX56 (KCX54 ,KCX55,KCX56) Features High current (max. 1A). Low voltage (max.80V). Package SOT-89-3L. SOT-89-3L 1 B 2 C 3 E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BCX54 45 V VCBO Collector-base voltage BCX55 60 V BCX56 100 V BCX54 45 V VCEO Collector-emitter voltage BCX55