PDTA123YMB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTA123YMB

Material: Si

Polaridad de transistor: PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 35

Encapsulados: SOT883B

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PDTA123YMB datasheet

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PDTA123YMB

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:112K  nxp
pdta123ye.pdf pdf_icon

PDTA123YMB

PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 04 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTA123YE SOT416 SC-75 - PDTC123YE PDTA123YK SOT346 SC-59A TO-236 PDTC123YK PDTA123YM SOT883 SC-1

 6.2. Size:115K  nxp
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PDTA123YMB

PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 04 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTA123YE SOT416 SC-75 - PDTC123YE PDTA123YK SOT346 SC-59A TO-236 PDTC123YK PDTA123YM SOT883 SC-1

 7.1. Size:54K  motorola
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PDTA123YMB

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor 1999 Apr 20 Preliminary specification Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

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