2SA1242Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 100 to 320 (V = -2 V, I = -0.5 A) FE (1) CE C: h = 70 (min) (V = -2 V, I = -4 A) FE (2) CE C Low collector saturation voltage : V = -1.0 V (max) (I = -4 A, I = -0.1 A) CE (sat) C B

2SA1242(PNP)TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = -2 V, IC = -0.5 A) : hFE (2) = 70 (min) (VCE = -2 V, IC = -4 A) TO-252-2L Low collector saturation voltage : VCE (sat) = -1.0 V (max) (IC = -4 A, IB = -0.1

isc Silicon PNP Power Transistor 2SA1242DESCRIPTIONh =100-320(I = -0.5A; V = -2V)FE C CEh =70(Min)(I = -4A; V = -2V)FE C CELow Collector-Emitter Saturation Voltage-: V )= -1.0V(Max)( I = -4A; I = -0.1A)CE(sat C B Power Dissipation-High: P = 10W@T =25,P = 10W@Ta=25C C CMinimum Lot-to-Lot variations for robust device performanceand reliable operation