DTA114YE-MS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA114YE-MS
Código: 54
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 40 V
Corriente del colector DC máxima (Ic): 0.07 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SOT523
Búsqueda de reemplazo de transistor bipolar DTA114YE-MS
DTA114YE-MS Datasheet (PDF)
dta114ye-ms.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTA114YE/DDTA114YEPreliminary Data SheetBias Resistor TransistorPNP Silicon Surface Mount Transistor with3Monolithic Bias Resistor Network2The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic1bias network consisting of two resistors; a series base resistor and a baseemitterresis
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTA114YE/DDTA114YEPreliminary Data SheetBias Resistor TransistorPNP Silicon Surface Mount Transistor with3Monolithic Bias Resistor Network2The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic1bias network consisting of two resistors; a series base resistor and a baseemitterresis
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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History: CMBA857F
History: CMBA857F
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