2SA1244 Todos los transistores

 ..1. Size:295K  toshiba
 2sa1244.pdf

2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = -0.4 V (max) (I = -3 A) C High speed switching time t = 1.0 s (typ.) stg Complementary to 2SC3074 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60

 ..2. Size:1176K  kexin
 2sa1244.pdf

DIP Type Transistors PNP Transistors 2SA1244 TO-251 Features Low collector saturation voltage 1 2 3 High speed switching time tstg = 1.0 s (typ.) Complementary to 2SC3074 1 3 2 1 Base 2 Collector 3 Emitter Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50

 ..3. Size:1148K  cn evvo
 2sa1244.pdf

2SA1244 PNP Transistors TO-251 Features Low collector saturation voltage 1 2 3 High speed switching time tstg = 1.0 s (typ.) Complementary to 2SC3074 1 3 2 1 Base 2 Collector 3 Emitter Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltag

 ..4. Size:190K  inchange semiconductor
 2sa1244.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1244 DESCRIPTION With TO-251(IPAK) packaging High speed switching time Low collector saturation voltage Complement to type 2SC3074 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 8.1. Size:212K  toshiba
 2sa1242.pdf

2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Unit mm Medium Power Amplifier Applications Excellent hFE linearity h = 100 to 320 (V = -2 V, I = -0.5 A) FE (1) CE C h = 70 (min) (V = -2 V, I = -4 A) FE (2) CE C Low collector saturation voltage V = -1.0 V (max) (I = -4 A, I = -0.1 A) CE (sat) C B

 8.2. Size:309K  toshiba
 2sa1245.pdf

2SA1245 TOSHIBA Transistor Silicon PNP Epitaxial Planar Type 2SA1245 High Frequency Amplifier and Switching Applications Unit mm VHF UHF Band Low Noise Amplifier Applications Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -8 V Emitter-base voltage VEBO -2 V Collector current IC -30 mA

 8.3. Size:279K  toshiba
 2sa1241.pdf

2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1241 Power Amplifier Applications Unit mm Power Switching Applications Low Collector saturation voltage VCE (sat) = -0.5 V (max) (I = -1 A) C Excellent switching time t = 1.0 s (typ.) stg Complementary to 2SC3076 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collecto

 8.4. Size:47K  sanyo
 2sa1248 2sc3116.pdf

Ordering number ENN1032B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions Color TV sound output, converters, inverters. unit mm 2009B Features [2SA1248/2SC3116] High breakdown voltage. 8.0 2.7 4.0 Large current capacity. Using MBIT process 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitter 1 2 3 2 Co

 8.5. Size:41K  sanyo
 2sa1249 2sc3117.pdf

Ordering number ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses Package Dimensions Color TV sound output, converters, inverters. unit mm 2009B Features [2SA1249/2SC3117] 8.0 High breakdown voltage. 2.7 4.0 Large current capacity. Adoption of MBIT process. 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitter 1 2 3 2

 8.6. Size:41K  sanyo
 2sa1246 2sc3114 2sc3114.pdf

Ordering number ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and highly resistant to breakdown. 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter 2 Collector ( ) 2SA1246 3 Base 1.3 1.3 SANYO NP Specifications Absolute Maxim

 8.7. Size:438K  sanyo
 2sa1240.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.8. Size:205K  jmnic
 2sa1249.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1249 DESCRIPTION With TO-126 package Complement to type 2SC3117 High breakdown voltage Large current capacity APPLICATIONS For color TV sound output,converters, Inverters applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=2

 8.9. Size:185K  lge
 2sa1242.pdf

2SA1242(PNP) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity hFE (1) = 100 to 320 (VCE = -2 V, IC = -0.5 A) hFE (2) = 70 (min) (VCE = -2 V, IC = -4 A) TO-252-2L Low collector saturation voltage VCE (sat) = -1.0 V (max) (IC = -4 A, IB = -0.1

 8.10. Size:1052K  kexin
 2sa1245.pdf

SMD Type Transistors PNP Transistors 2SA1245 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-30mA 1 2 Collector Emitter Voltage VCEO=-8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Col

 8.11. Size:213K  inchange semiconductor
 2sa1249.pdf

isc Silicon PNP Power Transistor 2SA1249 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V (Min) (BR)CEO Large Current Capacity Complement to Type 2SC3117 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV sound output, converters, inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT

 8.12. Size:218K  inchange semiconductor
 2sa1242.pdf

isc Silicon PNP Power Transistor 2SA1242 DESCRIPTION h =100-320(I = -0.5A; V = -2V) FE C CE h =70(Min)(I = -4A; V = -2V) FE C CE Low Collector-Emitter Saturation Voltage- V )= -1.0V(Max)( I = -4A; I = -0.1A) CE(sat C B Power Dissipation- High P = 10W@T =25 ,P = 10W@Ta=25 C C C Minimum Lot-to-Lot variations for robust device performance and reliable operation