DTC143EKA-MS
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC143EKA-MS
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 30
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
SOT-23-3L
Búsqueda de reemplazo de transistor bipolar DTC143EKA-MS
DTC143EKA-MS
Datasheet (PDF)
..1. Size:7028K msksemi
dtc143eua-ms dtc143ee-ms dtc143eca-ms dtc143eka-ms.pdf
www.msksemi.comDTC143Semiconductor CompianceSemiconductor CompianceDIGITAL TRANSISTOR (NPN)FEATURESBuilt-in bias resistors enable theconfiguration of an inverter circuit withoutconnecting external input resistors(see equivalent circuit)The bias resistors consist of thin-film resistorswith complete isolation to allow negative biasingof the input.They also have the advantag
5.1. Size:1522K rohm
dtc143eefra dtc143ekafra dtc143emfha.pdf
DTC143E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R14.7kDTC143EM DTC143EEBR2 (SC-105AA) (SC-89)4.7k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 4.7k 2) Built-in bias resistors enable the configuration o
5.2. Size:178K diodes
ddtc143eka.pdf
DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG
6.1. Size:57K motorola
pdtc143ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati
6.2. Size:57K philips
pdtc143ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati
6.3. Size:66K chenmko
chdtc143ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC143EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
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