2SC1623L4-T3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC1623PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current GainhFE=200(Typ.) VCE=6V, IC=1mA High VoltageVCEO = 50V MECHANICAL DATA Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623--T3 SOT-23 Tape Reel See Classifica

2SC1623TRANSISTOR (NPN) TRANSISTOR (NPN)FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value UnitVCBO 60 V Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V2. EMITTER 3. COLLECTOR IC Collector Current -C

RUMW UMW 2SC1623SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitte

Jingdao Microelectronics co.LTD 2SC16232SC1623 SOT-23NPN TRANSISTOR3FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V 12MAXIMUM RATINGS (Ta=25 unless otherwise noted)1.BASESymbolParameter Value Unit 2.EMITTER3.COLLECTORCollectorBase Voltage VCBO 60 VCollectorEmit

2SC1623SOT323 TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit3. COLLECTOR VCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 100 m