2SA1203-O Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1203-O

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 typ MHz

Capacitancia de salida (Cc): 50 max pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT89

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2SA1203-O datasheet

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2SA1203-O

 7.1. Size:99K  toshiba
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2SA1203-O

2SA1203 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1203 Audio Frequency Amplifier Applications Unit mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SC2883 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO

 7.2. Size:137K  jiangsu
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2SA1203-O

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1203 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2883 Small Flat Package 3. EMITTER Audio Frequency Amplifier Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VC

 7.3. Size:183K  htsemi
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2SA1203-O

2SA1 203 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2883 Small Flat Package 3. EMITTER Audio Frequency Amplifier Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A

MOSTRAR MÁS

Otros transistores... SST2907AHZG, UMF28N, UMT4401U3, 2SA1162G, 2SA1162O, 2SA1162Y, 2SA1201O, 2SA1201Y, A1013, 2SA1203-Y, 2SA1362G, 2SA1362Y, 2SA1576AR-Q, 2SA1576AR-R, 2SA1576AR-S, 2SA1797P, 2SA1797Q