2SA1362G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1362G

Código: AE*

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 typ MHz

Capacitancia de salida (Cc): 13 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT23

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2SA1362G datasheet

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2SA1362G

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2SA1362G

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit mm Power Switching Applications High DC current gain hFE = 120 to 400 Low saturation voltage VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 2

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2SA1362G

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit mm Power Switching Applications High DC current gain hFE = 120 400 Low saturation voltage VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 25

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2SA1362G

SMD Type or SMD Type TransistICs PNP Transistors 2SA1362 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Suitable for driver stage of small motor. Small package. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO

MOSTRAR MÁS

Otros transistores... UMT4401U3, 2SA1162G, 2SA1162O, 2SA1162Y, 2SA1201O, 2SA1201Y, 2SA1203-O, 2SA1203-Y, S9013, 2SA1362Y, 2SA1576AR-Q, 2SA1576AR-R, 2SA1576AR-S, 2SA1797P, 2SA1797Q, 2SA1797R, 2SB1114ZL