2SA1797Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1797Q
Código: AG*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200(typ) MHz
Capacitancia de salida (Cc): 36(typ) pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar 2SA1797Q
2SA1797Q Datasheet (PDF)
2sa1797 2sb1443.pdf
2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO -50 VCollector-emitter voltage
2sa1797 2sb1443 2sc4672.pdf
2SA1797 / 2SB1443TransistorsTransistors2SC4672(96-100-B208)(96-181-D208)291
2sa1797.pdf
Power Transistor (-50V, -3A) 2SA1797 Features Dimensions (Unit : mm) 1) Low saturation voltage. MPT3VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. 4.51.51.63) Complements the 2SC4672. (1) (2) (3) Packaging specifications 0.40.50.4 0.4Type 2SA17971.5 1.53.0(1)BasePackage MPT3(2)CollectorhFE PQ(3)Emi
2sa1797.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PNP SILICON TRANSISTOR POWER TRANSISTOR FEATURES * Low Saturation Voltage. VCE(SAT)=-0.35V(MAX) at IC / IB=-1A / -50mA * Excellent DC Current Gain Characteristics ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2SA1797G-x-AA3-R SOT-223 B C E Tape Reel- 2SA1797G-x-AB3-R SOT-8
2sa1797.pdf
2SA1797 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High transition frequency High power dissipation 123APACKAGE DIMENSIONS ECB D1F G2H K3J L1. Base2. CollectorMillimeter Millimeter REF. REF. 3. EmitterMin. Max. Min. Max. A 4.40
2sa1797.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1797 TRANSISTOR (PNP) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR 1 Excellent DC current gain characteristics 2 Complements to 2SC4672 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base
2sa1797 sot-89.pdf
2SA1797SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 4.6B1 4.41.61.81.41.42 3. EMITTER 3 2.64.252.43.75Features 0.8MIN0.53 Low saturation voltage 0.400.480.442x)0.13 B0.35 0.37 Excellent DC current gain characteristics 1.53.0 Complements to 2SC4672 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless other
2sa1797.pdf
WILLAS2SA1797SOT-89 Plastic-Encapsulate TransistorsTRANSISTOR (PNP)FEATURES SOT-89 Low saturation voltage Excellent DC current gain characteristics 1. BASEPb-Free package is available RoHS product for packing code suffix "G" 2. COLLECTOR 1Halogen free product for packing code suffix "H" 23. EMITTER3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parame
2sa1797.pdf
2SA1797 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,, 2SC4672 Low saturation voltage, excellent DC current gain characteristics, complements the 2SC4672. / Applications
2sa1797-q.pdf
SMD Type TransistorsPower Transistor2SA1797SOT-89 Unit: mm+0.14.50-0.1 1.50+0.1-0.11.80+0.1-0.1FeaturesLow saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA.0.48+0.1 0.53+0.1 0.44+0.1-0.1 -0.1 -0.1Excellent DC current gain characteristics.Complements the 2SA1797 and 2SC4672.1. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta
2sa1797.pdf
SMD Type TransistorsPNP Transistors2SA1797 Features1.70 0.1 Low saturation voltage Excellent DC current gain characteristics Complements to 2SC46720.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Vol
2sa1797-p.pdf
SMD Type TransistorsPower Transistor2SA1797SOT-89 Unit: mm+0.14.50-0.1 1.50+0.1-0.11.80+0.1-0.1FeaturesLow saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA.0.48+0.1 0.53+0.1 0.44+0.1-0.1 -0.1 -0.1Excellent DC current gain characteristics.Complements the 2SA1797 and 2SC4672.1. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta
2sa1797-p 2sa1797-q.pdf
2SA1797PNP Transistors Features3 Low saturation voltage Excellent DC current gain characteristics2 Complements to 2SC46721.Base12.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6
2sa1797.pdf
DATA SHEET 2SA1797 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -50 V CURRENT -3 A FEATURES LOW SATURATION VOLTAGE: VCE(SAT)= -0.35V@IC/IB= -1A/-50mA EXCELLENT DC CURRENT GAIN PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS LEAD FREE AND HALOGEN-FREE E MECHANICAL DATA C B CASE: SOT-89 PACKAGE TERMINALS: SOLDERABLE PER MIL-ST
2sa1797.pdf
Plastic-Encapsulate TransistorsFEATURES2SA1797 (PNP) Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 V1. BASEEmitter-Base Voltage VEBO -6 V2. COLLECTO SOT-89Collector Current -Contin
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