2SD1615GL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1615GL
Código: GL
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 19 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar 2SD1615GL
2SD1615GL Datasheet (PDF)
2sd1615.pdf
DATA SHEETSILICON TRANSISTORS2SD1615, 2SD1615ANPN SILICON EPITAXIAL TRANSISTORSPOWER MINI MOLDDESCRIPTION2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especiallyin Hybrid Integrated Circuits.FEATURESPACKAGE DIMENSIONS World Standard Miniature Packagein millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111
2sd1615a.pdf
DATA SHEETSILICON TRANSISTORS2SD1615, 2SD1615ANPN SILICON EPITAXIAL TRANSISTORSPOWER MINI MOLDDESCRIPTION2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in HybridIntegrated Circuits.FEATURESPACKAGE DIMENSIONS World Standard Miniature Packagein millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111
2sd1615.pdf
SMD Type TransistorsNPN Transistors2SD16151.70 0.1 Features Low VCE(sat) Complementary to 2SB11150.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1A Col
2sd1615a.pdf
SMD Type TransistorsNPN Transistors2SD1615A1.70 0.1 Features Low VCE(sat) Complementary to 2SB1115A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1A
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RTBN432AP1
History: RTBN432AP1
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D