2SD2150S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2150NPNGeneral use transistor1.2W 3A 30V 4ApplicationsCan be used for switching and amplifying in 1 2 3 various electrical and electronic equipments. SOT-89 MAX RATINGParameters Symbol RatingUnit VCEO Collectoremitter voltageIB=0 30 V VCBO V Collectorbase voltageIE=0 40 VEBO Emitter base voltageIC=0 5 V IC A Collector curren

Low Frequency Transistor (20V, 3A) 2SD2150 Features Dimensions(Unit : mm) 1) Low VCE(sat). 2SD2150VCE(sat) = 0.2V(Typ.) 4.5+0.2-0.1IC / IB = 2A / 0.1A 1.5+0.21.60.1 -0.12) Excellent current gain characteristics. 3) Complements the 2SB1424. (1) (2) (3)0.4+0.1-0.050.40.1 0.50.1 Structure 0.40.11.50.1 1.50.1Epitaxial planar type 3.00.2

2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics 1 Low Collector Saturation Voltage, 23A VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A ECCollector B C E 2 B D1 F GBase H KJ L3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2150 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) 2. COLLECTOR VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Un

2SD2150SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR SOT-893. EMITTER 4.6B4.41.61.8Features1.41.4 Excellent current-to-gain characteristics 2.64.252.43.75 Low collector saturation voltage VCE(sat) 0.8 VCE(sat)=0.5V(max) for IC/IB=2A/0.1A MIN0.530.400.480.44 2x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted)

2SD2150NPN Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage40VCEOVCollector-Emitter Voltage 20VEBOVEmitter-Base Voltage 6Collector Current IC 3 ACollector Power Dissipation PD 500 mWJunction TemperatureTj150CTstg -55 t

2SD2150(BR3DG2150T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,, 2SB1424(BR3CG1424T)Low VCE(sat),excellent current gain characteristic, Complementary to 2SB1424(BR3CG1424T). / Applications

ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 20 VEmitter Base Voltage VEBO 6 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 5 1) 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature

SMD Type TransistorsNPN Transistors2SD21501.70 0.1 Features Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) Complementary to 2SB14120.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V