S9014T-L Todos los transistores

 

S9014T-L Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: S9014T-L

Código: J6

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT523

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S9014T-L datasheet

 ..1. Size:895K  cn shikues
s9014t-l s9014t-h.pdf pdf_icon

S9014T-L

S9014T SOT-523 Plastic-Encapsulate Transistors TRANSISTOR (NPN) S9014T SOT 523 FEATURES Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Col

 8.1. Size:130K  secos
s9014t.pdf pdf_icon

S9014T-L

S9014T NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 4.55 0.2 3.5 0.2 Power dissipation PCM 0.4 W Collector current ICM 0.1 A Collector-base voltage V(BR)CBO 50 V 0.43+0.08 0.07 46+0.1 0. 0.1 Operating & storage junction temperature (1.27

 9.1. Size:38K  fairchild semi
ss9014.pdf pdf_icon

S9014T-L

SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO

 9.2. Size:47K  samsung
ss9014.pdf pdf_icon

S9014T-L

SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 mA Collector Current IC

Otros transistores... PXT8050C , PXT8050D , PXT8550C , PXT8550D , S8050H , S8050L , S9012L , S9014T-H , 2N2907 , SS8050W-H , SS8050W-J , SS8050W-L , SXT5401 , SXT5551 , SZT560A , 13001S , 2SA812M8 .

 

 

 


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