2SD1766-Q Datasheet. Equivalente

 ..1. Size:2313K  slkor
 2sd1766-p 2sd1766-q 2sd1766-r.pdf

2SD1766 NPN Transistors SMD Ty p e Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=32V 3 High-speed switching. 2 Complements to 2SB1188 1 1.Base 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VC

 7.1. Size:505K  1
 2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf

 7.2. Size:170K  rohm
 2sd1766 2sd1758 2sd1862.pdf

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SD1766 2SD1758 VCE(sat) = 0.5V (Typ.) 4.5+0.2 -0.1 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 1.5+0.2 C0.5 1.6 0.1 -0.1 5.1+0.2 -0.1 0.5 0.1 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3) 0.65 0.1 0.75 Structure 0.4+0.1 -0.05 0.9 0.4

 7.3. Size:124K  rohm
 2sd1055 2sd1766.pdf

Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 /

 7.4. Size:1242K  jiangsu
 2sd1766.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1766 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) 2. COLLECTOR Complements to 2SB1188 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector

 7.5. Size:1100K  htsemi
 2sd1766.pdf

2SD1766 TRANSISTOR (NPN) FEATURES SOT-89 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) Complements to 2SB1188 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 VCBO Collector-Base Voltage 40 V 3. EMITTER 3 VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2

 7.6. Size:260K  lge
 2sd1766 sot-89.pdf

2SD1766 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) MIN 0.53 Complements to 2SB1188 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)

 7.7. Size:496K  willas
 2sd1766.pdf

FM120-M WILLAS THRU 2SD1766 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features TRANSISTOR c(NPN) ss design, excellent power dissipation offers Bat h proce b FEATURES etter reverse leakage current and thermal resistance. SOT-89 SOD-123H Low profile surfa

 7.8. Size:531K  semtech
 st2sd1766u.pdf

ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Peak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A 0.5 Collector Power Dissipation PC W 2 1) Junction T

 7.9. Size:934K  kexin
 2sd1766.pdf

SMD Type Transistors NPN Transistors 2SD1766 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=32V High-speed switching. 0.42 0.1 0.46 0.1 Complements to 2SB1188 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector

 7.10. Size:201K  cn shikues
 2sd1766p 2sd1766q 2sd1766r.pdf

2SD1766 Medium Power Transistor Features Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A). hFE Classification Absolute Maximum Ratings Ta = 25 *1. Pw=20ms. *2. 40X40X 0.7mm Ceramic board. Electrical Characteristics Ta = 25 REV.08 1 of 1