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847BT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 847BT
   Código: 1F
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300(typ) MHz
   Capacitancia de salida (Cc): 6(max) pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT523

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847BT Datasheet (PDF)

 ..1. Size:724K  slkor
846at 846bt 846ct 847at 847bt 847ct 848at 848bt 848ct 849at 849bt 849ct 850at 850bt 850ct.pdf

847BT
847BT

BC846T-BC850TNPN Silicon Epitaxial Transistorfor switching and amplifier applicationsOAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value UnitCollector Base Voltage BC846T 80VCBOBC847T, BC850T 50 VBC848T, BC849T 30Collector Emitter Voltage BC846T 65VCEOBC847T, BC850T 45 VBC848T, BC849T 30Emitter Base Voltage BC846T, BC847T 6VEBO VBC848T, BC849T, BC850T 5

 0.1. Size:310K  diodes
bc847at bc847bt bc847ct.pdf

847BT
847BT

BC847AT, BT, CT 45V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 45V Case: SOT523 IC = 100mA Collector Current Case Material: Molded Plastic. Green Molding Compound. Epitaxial Planar Die Construction UL Flammability Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Complementar

 0.3. Size:66K  onsemi
bc847att1 bc847btt1 bc847ctt1.pdf

847BT
847BT

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 NSV Prefix for Automotive and Other Applications Requiring BASEUnique Site and Control

 0.4. Size:64K  onsemi
nsvbc847btt1g.pdf

847BT
847BT

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 NSV Prefix for Automotive and Other Applications Requiring BASEUnique Site and Control

 0.5. Size:655K  onsemi
bc847btt1g bc847att1 bc847ctt1g.pdf

847BT
847BT

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1BASE Pb-Free Packages are Available*2EMITTERMAXIMUM RATINGS (TA = 25C)Rating

 0.6. Size:138K  lrc
lbc847btt1g.pdf

847BT
847BT

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC847ATT1GThese transistors are designed for general purpose amplifierS-LBC847ATT1Gapplications. They are housed in the SC-89 package which is designed for low power surface mount applications. SeriesFeatures Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 0.7. Size:139K  lrc
lbc847att1g lbc847btt1g lbc847ctt1g.pdf

847BT
847BT

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC847ATT1GThese transistors are designed for general purpose amplifierS-LBC847ATT1Gapplications. They are housed in the SC-89 package which is designed for low power surface mount applications. SeriesFeatures Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 0.8. Size:238K  chenmko
cht847btgp.pdf

847BT
847BT

CHENMKO ENTERPRISE CO.,LTDCHT847BTGPSURFACE MOUNT NPN General Purpose TransistorVOLTAGE 45 Volts CURRENT 0.1 AmpereAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESC-75/SOT-416* Surface mount package. (SC-75/SOT-416)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation. 0

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