MBT3946 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MBT3946
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Capacitancia de salida (Cc): 4 max pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT363
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MBT3946 datasheet
..1. Size:625K slkor
mbt3946.pdf 
MBT3946 Dual General Purpose Transistor NPN+PNP Silicon 2 1 3 6 5 4 1 2 3 4 5 6 SOT-363(SC-88) NPN+PNP Maximum Ratings Rating Value Unit Symbol Collector-Emitter Voltage V Vdc CEO 40 (NPN) -40 (PNP) VCBO Vdc Collector-Base Voltage 60 (NPN) -40 (PNP) VEBO Vdc Emitter-Base VOltage 6.0 (NPN) -5.0 (PNP) IC mAdc Collector Current-Continuous 200 (NPN) -200 (P
0.1. Size:113K philips
pmbt3946ypn.pdf
PMBT3946YPN 40 V, 200 mA NPN/PNP general-purpose double transistor Rev. 01 12 May 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Package complement complement configuration NXP JEITA
0.2. Size:111K philips
pmbt3946vpn.pdf
PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor Rev. 01 31 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP JEITA PMBT3946VPN SOT666 - PMBT3904
0.3. Size:113K nxp
pmbt3946ypn.pdf
PMBT3946YPN 40 V, 200 mA NPN/PNP general-purpose double transistor Rev. 01 12 May 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Package complement complement configuration NXP JEITA
0.4. Size:111K nxp
pmbt3946vpn.pdf
PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor Rev. 01 31 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP JEITA PMBT3946VPN SOT666 - PMBT3904
0.5. Size:174K onsemi
smbt3946dw1t1g mbt3946dw1t1g.pdf
MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount
0.6. Size:241K onsemi
mbt3946dw1t1-d.pdf
MBT3946DW1T1G Dual General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 http //onsemi.com surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount (3) (2) (1) applications
0.7. Size:169K onsemi
mbt3946dw1t1g smbt3946dw1t1g.pdf
MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount
0.8. Size:174K onsemi
mbt3946dw1t2g.pdf
MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount
0.9. Size:358K wietron
mbt3946dw.pdf
MBT3946DW Dual General Purpose Transistor 2 1 3 6 5 4 NPN+PNP Silicon 1 2 3 4 5 6 SOT-363(SC-88) NPN+PNP Maximum Ratings Rating Value Unit Symbol Collector-Emitter Voltage V Vdc CEO (NPN) 40 -40 (PNP) VCBO Vdc Collector-Base Voltage 60 (NPN) -40 (PNP) VEBO Vdc Emitter-Base VOltage 6.0 (NPN) -5.0 (PNP) IC mAdc Collector Current-Continuous 200 (NPN) -200 (P
0.10. Size:397K willas
mmbt3946dw1t1.pdf
FM120-M WILLAS MMBT3946DW1T1 THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to TheM
0.11. Size:664K lrc
lmbt3946dw1t1g lmbt3946dw1t3g.pdf
LMBT3946DW1T1G S-LMBT3946DW1T1G Dual General Purpose Transistors PNP/NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V S
0.12. Size:664K lrc
lmbt3946dw1t1g.pdf
LMBT3946DW1T1G S-LMBT3946DW1T1G Dual General Purpose Transistors PNP/NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V S
0.13. Size:3385K cn shikues
mmbt3946dw.pdf
MMBT3946DW Descriptions Silicon PNP and NPN transistor in a SOT-363 Plastic Package. Features High DC Current Gain, Low Collector to Emitter Saturation Voltage. Applications General purpose amplifier and switching. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 9
0.14. Size:513K cn yfw
mmbt3946dw.pdf
MMBT3946DW SOT-363 NPN / PNP Silicon Epitaxial Planar Transistors 6 5 4 Q2 Q1 1 2 3 1. Emitter 2. Base 3. Collector 4. Emitter 5. Base 6. Collector Simplified outline(SOT-363) Q1 Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Q2 Maximum Ratin
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History: BC527
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