S9013F Todos los transistores

 ..1. Size:838K  slkor
 s9013d s9013e s9013f s9013g s9013h s9013i s9013j.pdf

S9013 TRANSISTOR (NPN) FEATURES Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE 3. COLLECTOR Equivalent Circuit Collector-Base Voltage 40 V Collector-Emitter Voltage 25 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.5 A Co

 9.1. Size:40K  fairchild semi
 ss9013.pdf

SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCB

 9.2. Size:53K  samsung
 ss9013.pdf

SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Vo

 9.3. Size:201K  mcc
 mms9013-l.pdf

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMS9013-L Micro Commercial Components CA 91311 Phone (818) 701-4933 MMS9013-H Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating

 9.4. Size:201K  mcc
 mms9013-h.pdf

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMS9013-L Micro Commercial Components CA 91311 Phone (818) 701-4933 MMS9013-H Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating

 9.5. Size:192K  mcc
 s9013h s9013g s9013i.pdf

MCC S9013-G TM Micro Commercial Components 20736 Marilla Street Chatsworth S9013-H Micro Commercial Components CA 91311 S9013-I Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating and

 9.6. Size:197K  auk
 sts9013.pdf

STS9013 NPN Silicon Transistor Descriptions PIN Connection General purpose application. C Switching application. B Features Excellent hFE linearity. E Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25 C) Characteristic Symbol Ratings Unit Collector-B

 9.7. Size:54K  secos
 s9013w.pdf

S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity A L 3 3 CLASSIFICATION OF hFE Top View C B 1 1 2 Product-Rank S9013W-L S9013W-H S9013W-J 2 K E Range 120 200 200 350 300 400 D Marking Code J3

 9.8. Size:343K  secos
 s9013.pdf

 9.9. Size:95K  secos
 s9013t.pdf

S9013T NPN Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55 0.2 3.5 0.2 FEATURE Power dissipation P CM 0.625 W Tamb=25 C Collector current CM 0.5 A I 0.43+0.08 0.07 Collector-base voltage 46+0.1 0. 0.1 V(BR)CBO 40 V (1.27 Typ.) Operating and storage junction temperature range 1 Emitter +0.2

 9.10. Size:925K  jiangsu
 s9013w.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR (NPN) SOT 323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. C

 9.11. Size:809K  jiangsu
 s9013.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) SOT 23 FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. 1. BASE MARKING J3 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

 9.12. Size:431K  htsemi
 s9013w.pdf

S901 3W TRANSISTOR(NPN) SOT 323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA P Collector Power Dissipatio

 9.13. Size:967K  htsemi
 s9013.pdf

S901 3 TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power

 9.14. Size:240K  gsme
 s9013.pdf

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9013 FEATURES FEATURES FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9012 GM9012 MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATIN

 9.15. Size:158K  lge
 s9013 to-92.pdf

S9013 Transistor(NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (milli

 9.16. Size:1555K  lge
 s9013.pdf

S9013 NPN Silicon Epitaxial Planar Transistor FEATURES A SOT-23 High Collector Current.(IC= 500mA). Dim Min Max Complementary To S9012. A 2.70 3.10 E B 1.10 1.50 K B Excellent HFE Linearity. C 1.0 Typical D 0.4 Typical Power dissipation.(PC=300mW). E 0.35 0.48 J D G 1.80 2.00 G H 0.02 0.1 J 0.1 Typical APPLICATIONS H K 2.20 2.60 C All Dimensions in mm Hi

 9.17. Size:167K  lge
 s9013 sot-23.pdf

S9013 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector

 9.18. Size:125K  wietron
 s9013lt1.pdf

S9013LT1 3 P b Lead(Pb)-Free 1 2 SOT-23 Value VCEO 20 40 5.0 500 S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S 0.1 20 40 100 100 u 0.15 35 0.15 u 4.0 1/2 28-Apr-2011 WEITRON http //www.weitron.com.tw S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain h

 9.19. Size:407K  shenzhen
 s9013.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE MAXIMUM RATINGS TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emi

 9.20. Size:359K  shenzhen
 s9013lt1.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter

 9.21. Size:256K  can-sheng
 s9013.pdf

TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES z FEATURES TO-92 Complementary to S9012 z Excellent hFE linearity 1.EMITTER MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 2.BASE Symbol Parameter Val

 9.22. Size:260K  can-sheng
 s9013 sot-23.pdf

 9.23. Size:200K  galaxy
 s9013.pdf

Product specification NPN Silicon Epitaxial Planar Transistor S9013 FEATURES Pb High Collector Current.(I = 500mA). C Lead-free Complementary To S9012. Excellent H Linearity. FE Power dissipation.(P =300mW). C APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9013 J3 SOT-23 none is for

 9.24. Size:703K  umw-ic
 s9013l s9013h s9013j.pdf

R UMW UMW S9013 SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) SOT 23 FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. 1. BASE MARKING J3 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V

 9.25. Size:607K  anbon
 s9013.pdf

S9013 General Purpose Transistors NPN Silicon Package outline Features High collector current. (500mA) SOT-23 Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. S9013 -H. (B) (C) (A) Mechanical data Epoxy UL94-V0 rated flame retardant 0.055 (1.40) 0.024 (0.60) 0.047 (1.20) 0.018 (0

 9.26. Size:3277K  born
 s9013.pdf

S9013 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complementary to S9012 High Stability and High Reliability MARKING J3 1. BASE 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage V

 9.27. Size:2756K  fuxinsemi
 s9013.pdf

S9013 General Purpose Transistors NPN Silicon FEATURES High Collector Current. SOT-23 Complementary to S9012. Excellent hFE Linearity. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipat

 9.28. Size:1942K  high diode
 s9013.pdf

S9 013 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 High Collector Current. Complementary to S9012. Excellent hFE Linearity. Marking J3 Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V C V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power D

 9.29. Size:520K  jsmsemi
 s9013.pdf

S9013 NPN Epitaxial Silicon Transistor TO-92 4.55 0.2 3.5 0.2 FEATURE Power dissipation P CM 0.625 W Tamb=25 C Collector current CM 0.5 A I 0.43+0.08 0.07 Collector-base voltage 46+0.1 0. 0.1 V(BR)CBO 40 V (1.27 Typ.) Operating and storage junction temperature range 1 Emitter +0.2 1.25 0.2 2 Base 1 2 3 stg Tj, T -55 to +150 C 3 Collector 2.5

 9.30. Size:1438K  mdd
 s9013.pdf

S9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. SOT-23 Plastic Package MARKING J3 O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEB

 9.31. Size:4035K  msksemi
 s9013-ms.pdf

www.msksemi.com S9013-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High Collector Current. Complementary to S9012-MS Excellent hFE Linearity. 1. BASE 2. EMITTER MARKING J3 SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Volta

 9.32. Size:1043K  cn evvo
 s9013 s9013-l s9013-h s9013-j.pdf

S9013 NPN Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Excellent hFE linearity Collector Current IC=0.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 500 mA Collector Power Dissipat

 9.33. Size:885K  cn salltech
 s9013-l s9013-h s9013-j.pdf

 9.34. Size:793K  cn shandong jingdao microelectronics
 s9013-l s9013-h s9013-j.pdf

Jingdao Microelectronics co.LTD S9013 General Purpose Transistor NPN Silicon FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. SOT-23 3 COLLECTOOR 3 1 DEVICE MARKING BASE S9013 = J3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 25 Vdc C

 9.35. Size:619K  cn shikues
 s9013.pdf

 9.36. Size:1703K  wpmtek
 s9013l s9013h s9013j.pdf

 9.37. Size:471K  cn yfw
 s9013 s9013-l s9013-h s9013-j.pdf

S9013 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Excellent hFE linearity Collector Current IC=0.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 500 mA Collector Pow

 9.38. Size:895K  cn yongyutai
 s9013.pdf

S9013 SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current Ic=0.5A MARKING J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage

 9.39. Size:727K  cn twgmc
 s9013l s9013h s9013j.pdf

S9013 S9013 TRANSISTOR NPN 1 BASE 2 EMITTER 3 COLLECTOR TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Contin

 9.40. Size:319K  cn yangzhou yangjie elec
 s9013l s9013h s9013j.pdf

RoHS RoHS COMPLIANT COMPLIANT S9013 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking J3 Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 40 Collector-Emitter Voltage V

 9.41. Size:411K  cn doeshare
 s9013.pdf

S9013 S9013 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9012 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking J3 Maximum Ratings & Thermal Characteristics TA = 25 C unl

 9.42. Size:865K  cn cbi
 s9013w.pdf

SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR (NPN) SOT 323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Cu

 9.43. Size:334K  cn cbi
 s9013.pdf

S9013 TRANSISTOR NPN FEATURES SOT-23 Complementary to S9012 Excellent hFE linearity 1 BASE 2 EMITTER 3 COLLECTOR MARKING J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Coll

 9.44. Size:228K  cn fosan
 s9013.pdf

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD S9013 MAXIMUM RATINGS (T =25 ) a Characteristic Symbol Rating Unit Collector-Base voltage V 40 Vdc CBO - -Collector-Emitter Voltage V 30 Vdc CEO - Emitter-Base voltage V 5.0 Vdc EBO

 9.45. Size:2001K  cn goodwork
 s9013.pdf

S9013 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V. Collector current IC=0.5A. ansition frequency fT>150MHz @ Tr IC=20mAdc, VCE=6Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 C Terminals Solde

 9.46. Size:588K  cn hottech
 s9013.pdf

S9013 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to S9012 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol

 9.47. Size:589K  cn xch
 s9013.pdf

 9.48. Size:195K  inchange semiconductor
 s9013.pdf

isc Silicon NPN Power Transistor S9013 DESCRIPTION Excellent hFE linearity Complement to PNP Type S9012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter