SS30101-Q
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SS30101-Q
Código: KEY
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
SOT23
SS30101-Q
Datasheet (PDF)
..1. Size:809K slkor
ss30101-q ss30101-p.pdf
SS30101-QSS30101 TRANSISTOR (NPN)FEATURESSOT-23Complimentary to SS30101MARKING: KEY 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (T =25 unless otherwise noted)aParameter Value Unit Symbo1 Collector-Base VoltageV VCBO 50Collector-Emitter VoltageV 40 VCEOEmitter-Base VoltageVV
7.1. Size:125K diodes
dss30101l.pdf
DSS30101LLOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Ideal for Medium Power Amplification and Switching Case: SOT-23 Ultra Low Collector-Emitter Saturation Voltage Case Material: Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) Moisture Sensi
8.1. Size:107K onsemi
nss30100lt1g.pdf
NSS30100LT1G30 V, 2 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is important.
9.1. Size:128K philips
pbss301pd.pdf
PBSS301PD20 V, 4 A PNP low VCEsat (BISS) transistorRev. 03 17 December 2007 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301ND.1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit
9.2. Size:128K philips
pbss301nd.pdf
PBSS301ND20 V, 4 A NPN low VCEsat (BISS) transistorRev. 03 7 September 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PD.1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit
9.3. Size:177K nxp
pbss301nx.pdf
PBSS301NX12 V, 5.3 A NPN low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PX.1.2 Features Low collector-emitter saturation voltage VCEsa
9.4. Size:149K nxp
pbss301nz.pdf
PBSS301NZ12 V, 5.8 A NPN low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
9.5. Size:152K nxp
pbss301pz.pdf
PBSS301PZ12 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
9.6. Size:245K nxp
pbss301pd.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
9.7. Size:176K nxp
pbss301px.pdf
PBSS301PX12 V, 5.3 A PNP low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301NX.1.2 Features Low collector-emitter saturation voltage VCEsa
9.8. Size:245K nxp
pbss301nd.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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