2SA1744K
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1744K
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30(typ)
MHz
Capacitancia de salida (Cc): 300
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de transistor bipolar 2SA1744K
2SA1744K
Datasheet (PDF)
..1. Size:174K cn sptech
2sa1744m 2sa1744l 2sa1744k.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1744DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BAPPLICATIONSThis type of power transistor is developed for high-speedswitching and f
7.1. Size:144K nec
2sa1744.pdf
DATA SHEETSILICON POWER TRANSISTOR2SA1744PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features a high hFE at Low VCE(sat). This transistor isideal for use as a driver in DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontributes
7.2. Size:1291K cn sps
2sa1744t2tl.pdf
2SA1744T2TLSilicon PNP Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features a high h at low V ,which
7.3. Size:214K inchange semiconductor
2sa1744.pdf
isc Silicon PNP Power Transistor 2SA1744DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t
Otros transistores... 2N3200
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