2SA1758E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1758E
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90(typ) MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar 2SA1758E
2SA1758E Datasheet (PDF)
2sa1758d 2sa1758e 2sa1758f.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1758DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -2V, I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sa1758.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1758 DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage
2sa1758.pdf
isc Silicon PNP Power Transistor 2SA1758DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -2V, I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching
2sa1759 2sc4505 2sc4620.pdf
2SA1759TransistorsTransistors2SC4505 / 2SC4620(96-97-A324)(96-178-C300)305
2sa1759.pdf
2SA1759 Transistors High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A) 2SA1759 Dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -400V) MPT32) Low saturation voltage, 4.51.5typically VCE (sat)= -0.2V at IC / IB = -20mA / -2mA. 1.63) High switching speed, typically tf = 1s at Ic =100mA. 4) Wide SOA
2sa1757.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1757 DESCRIPTION With TO-220Fa package Low saturation voltage Wide area of safe operation APPLICATIONS For switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -1
2sa1759.pdf
SMD Type TransistorsPNP Transistors2SA1759SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-400V High switching speed Complements to 2SC45050.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Coll
2sa1757.pdf
isc Silicon PNP Power Transistor 2SA1757DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh Switching SpeedLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicat
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050