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2SC3157K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3157K
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 150 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO220C

 Búsqueda de reemplazo de transistor bipolar 2SC3157K

 

2SC3157K Datasheet (PDF)

 ..1. Size:177K  cn sptech
2sc3157m 2sc3157l 2sc3157k.pdf

2SC3157K
2SC3157K

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3157DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.)@I = 5ACE(sat) CFast Switching SpeedComplement to Type 2SA1261APPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and high frequency pow

 7.1. Size:156K  jmnic
2sc3157.pdf

2SC3157K
2SC3157K

JMnic Product Specification Silicon NPN Power Transistors 2SC3157 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SA1261 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETE

 7.2. Size:200K  inchange semiconductor
2sc3157.pdf

2SC3157K
2SC3157K

isc Silicon NPN Power Transistor 2SC3157DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.)@I = 5ACE(sat) CFast Switching SpeedComplement to Type 2SA1261Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching

 8.1. Size:102K  sanyo
2sc3150.pdf

2SC3157K
2SC3157K

Ordering number:EN1069CNPN Triple Diffused Planar Silicon Transistor2SC3150800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3150]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame

 8.2. Size:97K  sanyo
2sc3151.pdf

2SC3157K
2SC3157K

Ordering number:EN1070CNPN Triple Diffused Planar Silicon Transistor2SC3151800V/1.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3151]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Con

 8.3. Size:102K  sanyo
2sc3152.pdf

2SC3157K
2SC3157K

Ordering number:EN1071DNPN Triple Diffused Planar Silicon Transistor2SC3152800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3152]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi

 8.4. Size:54K  sanyo
2sc3156.pdf

2SC3157K

 8.5. Size:97K  sanyo
2sc3153.pdf

2SC3157K
2SC3157K

Ordering number:EN1072DNPN Triple Diffused Planar Silicon Transistor2SC3153800V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3153]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi

 8.6. Size:221K  jmnic
2sc3151.pdf

2SC3157K
2SC3157K

JMnic Product Specification Silicon NPN Power Transistors 2SC3151 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO900V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 800V/1.5A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb

 8.7. Size:222K  jmnic
2sc3152.pdf

2SC3157K
2SC3157K

JMnic Product Specification Silicon NPN Power Transistors 2SC3152 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO900V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

 8.8. Size:144K  jmnic
2sc3158.pdf

2SC3157K
2SC3157K

JMnic Product Specification Silicon NPN Power Transistors 2SC3158 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

 8.9. Size:217K  jmnic
2sc3153.pdf

2SC3157K
2SC3157K

JMnic Product Specification Silicon NPN Power Transistors 2SC3153 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO900V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

 8.10. Size:142K  jmnic
2sc3159.pdf

2SC3157K
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JMnic Product Specification Silicon NPN Power Transistors 2SC3159 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

 8.11. Size:346K  lzg
2sc3150a.pdf

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2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR : Purpose: Switching regulator applications. : Features: High V , high speed switching, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1000 V CBO V 750 V

 8.12. Size:174K  cn sptech
2sc3150k 2sc3150l 2sc3150m.pdf

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SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3150DESCRIPTIONHigh Breakdown Voltage-: V = 900V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBOV Collector-Emitter Voltage 800 V

 8.13. Size:216K  inchange semiconductor
2sc3150.pdf

2SC3157K
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isc Silicon NPN Power Transistor 2SC3150DESCRIPTIONHigh Breakdown Voltage-: V = 900V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 8.14. Size:202K  inchange semiconductor
2sc3151.pdf

2SC3157K
2SC3157K

isc Silicon NPN Power Transistor 2SC3151DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE

 8.15. Size:202K  inchange semiconductor
2sc3152.pdf

2SC3157K
2SC3157K

isc Silicon NPN Power Transistor 2SC3152DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE

 8.16. Size:199K  inchange semiconductor
2sc3158.pdf

2SC3157K
2SC3157K

isc Silicon NPN Power Transistor 2SC3158DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@I = 3ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter and highfrequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

 8.17. Size:190K  inchange semiconductor
2sc3156.pdf

2SC3157K
2SC3157K

isc Silicon NPN Power Transistor 2SC3156DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.18. Size:202K  inchange semiconductor
2sc3153.pdf

2SC3157K
2SC3157K

isc Silicon NPN Power Transistor 2SC3153DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE

 8.19. Size:195K  inchange semiconductor
2sc3159.pdf

2SC3157K
2SC3157K

isc Silicon NPN Power Transistor 2SC3159DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@I = 6ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter and highfrequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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