2SC3834Y Todos los transistores

 ..1. Size:128K  cn sptech
 2sc3834o 2sc3834y 2sc3834g.pdf

 7.1. Size:208K  utc
 2sc3834.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.. FEATURES * Humidifier, DC-DC converter, and general purpose ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SC3834L-TA3-T 2SC3834G-TA3-T TO-220

 7.2. Size:118K  jmnic
 2sc3834.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3834 DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO

 7.3. Size:23K  sanken-ele
 2sc3834.pdf

2SC3834 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol Symbol 2SC3834 Unit Conditions 2SC3834 Unit 0.2 4.8 0.2 10.2 0.1 2.0 ICBO VCBO 200 V VCB=200V 100max A IEBO 100max A

 7.4. Size:506K  blue-rocket-elect
 2sc3834f.pdf

2SC3834F(BR3DA3834F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features / Applications - Humidifier, DC-DC converter, and general purpose. / Equivalent Circuit /

 7.5. Size:305K  foshan
 2sc3834f 3da3834f.pdf

2SC3834F(3DA3834F) NPN /SILICON NPN TRANSISTOR - Purpose Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25 )

 7.6. Size:165K  foshan
 2sc3834 3da3834.pdf

2SC3834(3DA3834) NPN /SILICON NPN TRANSISTOR - Purpose Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25 ) 50

 7.7. Size:1282K  cn sps
 2sc3834t1tl.pdf

2SC3834T1TL Silicon NPN Power Transistor DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec

 7.8. Size:218K  inchange semiconductor
 2sc3834.pdf

isc Silicon NPN Power Transistor 2SC3834 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose appl