2SC4467O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4467O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20(typ) MHz
Capacitancia de salida (Cc): 200 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO3PN
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2SC4467O Datasheet (PDF)
2sc4467o 2sc4467p 2sc4467y.pdf
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SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2SC4467 DESCRIPTIONWith TO-3PN packageComplement to type 2SA1694APPLICATIONS Audio and general purposePINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UN
2sc4467.pdf
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UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4467 is suitable for audio an
2sc4467.pdf
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JMnic Product SpecificationSilicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITV
2sc4467.pdf
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2SC4467Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit0.24.80.415.60.1VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0IEBOVCEO 120 V VEB=6V 10max
2sc4467.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4467DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1694100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MA
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .