2SC4552L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4552L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120(typ) MHz
Capacitancia de salida (Cc): 180 pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar 2SC4552L
2SC4552L Datasheet (PDF)
2sc4552m 2sc4552l 2sc4552k.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4552DESCRIPTION With TO-220F package High hFE and low VCE(sat) APPLICATIONS For high-speed switching For use in drivers such as DC-DC converters and actuators. PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25)
2sc4552.pdf
DATA SHEETSILICON POWER TRANSISTOR2SC4552NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features low VCE(sat) and high hFE. This transistor isideal for use in drivers such as DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontribu
2sc4552t2tl.pdf
2SC4552T2TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V, I = 3A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 8A, I = 0.4A)CE(sat) C BAPPLICATIONSDesigned for use as a driver in DC/DC converters andactuators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
2sc4552.pdf
isc Silicon NPN Power Transistor 2SC4552DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V, I = 3A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 8A, I = 0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a drive
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
