2SC5198R Todos los transistores

 ..1. Size:148K  toshiba
 2sc5198r 2sc5198o.pdf

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier s output stage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-em

 ..2. Size:427K  cn sptech
 2sc5198r 2sc5198o.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5198 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 7.1. Size:148K  toshiba
 2sc5198.pdf

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier s output stage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-em

 7.2. Size:1367K  jilin sino
 2sc5198 2sa1941.pdf

Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltage VCEO

 7.3. Size:208K  nell
 2sc5198b.pdf

RoHS 2SC5198B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 10A/140V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO =140V (min) 5.45 0.1 5.45 0.1 1.4 Complementary to 2SA1941B B C E TO-3P package which can be installed to the heat

 7.4. Size:1263K  cn evvo
 2sc5198.pdf

2SC5198 Silicon NPN transistor Power Amplifier Applications Complementary to 2SA1941 High collector voltage VCEO=140V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

 7.5. Size:1285K  cn sps
 2sc5198t7tl.pdf

2SC5198T7TL Silicon NPN Power Transistor DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect

 7.6. Size:441K  cn yw
 2sc5198.pdf

2SC5198 Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage Vceo=140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SA1941 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage V

 7.7. Size:218K  inchange semiconductor
 2sc5198.pdf

isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage appli