2SA1257G4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:ENN1057CPNP/NPN Epitaxial Planar Silicon Transistors2SA1257/2SC3143High-Voltage Switching, AF Power Amp,100W Output Predriver ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SA1257/unit:mm2SC3143-applied sets to be made small and slim.2018B High breakdown voltage (VCEO 160V).[2SA1257/2SC3143] Small output capac

SMD Type TransistorsPNP Transistors 2SA1257SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh breakdown voltage.Small output capacitance.1 2 Very small-sized package permitting the 2SA1257/+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.12SC3143-applied sets to be made small and slim.1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter

2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 High Voltage Switching Applications Unit: mm High voltage: VCBO = -200 V (min) V = -200 V (min) CEO Small package Complementary to 2SC3138 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -200 VCollector-emitter voltage VCEO -200 V

Ordering number:EN1056CPNP Epitaxial Planar Silicon Transistors2SA1256High Frequency Amp ApplicationsApplications Package Dimensions Ideally suited for use in FM RF amplifiers, mixers,unit:mmoscillators, converters, and IF amplifiers.2018B[2SA1256]Features High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).1 : Base2 : Emitter3 : Collecto

Ordering number:ENN1049EPNP/NPN Epitaxial Planar Silicon Transistors2SA1253/2SC3135High-hFE, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and high durability against breakdown.2033A[2SA1253/2SC3135]2.24.00.40.50.40.41 2 31.3 1.31 : Emitter2 : Collector( ) : 2SA1253 3 : Base3.03.8SANYO : SPASpecificationsAbsolut

Ordering number:ENN1048CPNP/NPN Epitaxial Planar Silicon Transistors2SA1252/2SC3134High VEBO, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and high durability against breakdown.2018B[2SA1252/2SC3134]0.40.1630 to 0.11 0.95 0.95 21.92.91 : Base2 : Emitter( ) : 2SA1252 3 : CollectorSANYO : CPSpecificationsAbsolute Maxim

Ordering number:ENN1059DPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SA1259/2SC314560V/5A for High-Speed Drivers ApplicationsFeatures Package Dimensions High fT.unit:mm High switching speed.2010C Wide ASO.[2SA1259/2SC3145]10.24.53.65.11.31.20.80.41 : Base1 2 32 : Collector ( ) : 2SA12593 : Emitter2.55 2.55SANYO : TO-220ABSp

Ordering number:ENN1058DPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SA1258/2SC314460V/3A for High-Speed Drivers ApplicationsFeatures Package Dimensions High fT.unit:mm High switching speed.2010C Wide ASO.[2SA1258/2SC3144]10.24.53.65.11.31.20.80.41 : Base1 2 32 : Collector( ) : 2SA12583 : Emitter2.55 2.55SANYO : TO-220ABSpe

Transistor2SA1254Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC22066.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High transition frequency fT.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85A

Transistor2SA1254Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC22066.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High transition frequency fT.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85A

JMnic Product Specification Silicon PNP Power Transistors 2SA1250 DESCRIPTION With TO-66 package Excellent safe operating area High breadown voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum ratings(Ta=)

SMD Type orSMD Type TransistICsPNP Transistors2SA1256SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh fT (230MHz typ), and small Cre (1.1pF typ).1 2Small NF (2.5dB typ).+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter

SMD Type orSMD Type TransistICsPNP Transistors2SA1252SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh VEBO.1 2Wide ASO and high durability against breakdown.+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC31341.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -60

isc Silicon PNP Power Transistor 2SA1250DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOLow Collector Saturatioin Voltage-: V = -1.0V(Max.)@ I = -5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Darlington Power Transistor 2SA1259DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -2.5AFE CLow Collector-Emitter Saturation Voltage: V = -1.5V(Max)@ I = -2.5ACE(sat) CComplement to Type 2SC3145Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier high f and high