TIP41C-R Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP41C-R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 65 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO220
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TIP41C-R datasheet
..1. Size:267K st
tip41c-r tip41c-o tip41c-y tip42c-r tip42c-o tip42c-y.pdf 
TIP41C TIP42C Complementary power transistors . Features Complementary PNP-NPN devices New enhanced series High switching speed hFE grouping hFE improved linearity 3 2 1 Applications TO-220 General purpose circuits Audio amplifier Figure 1. Internal schematic diagram Power linear and switching Description The TIP41C is a base island technolog
8.1. Size:275K st
tip41c tip42c.pdf
TIP41C TIP42C Complementary power transistors . Features Complementary PNP-NPN devices New enhanced series High switching speed hFE grouping hFE improved linearity 3 2 1 Applications TO-220 General purpose circuits Audio amplifier Figure 1. Internal schematic diagram Power linear and switching Description The TIP41C is a base island technolog
8.2. Size:39K st
tip41a tip41b tip41c tip42a tip42b tip42c.pdf
TIP41A/41B/41C TIP42A/42B/42C COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are TIP42A, TIP42B and TIP42C. 3 2 1 TO-220 INTERNAL SCH
8.3. Size:527K fairchild semi
tip41 tip41a tip41b tip41c.pdf
July 2008 TIP41/TIP41A/TIP41B/TIP41C NPN Epitaxial Silicon Transistor Features Complementary to TIP42/TIP42A/TIP42B/TIP42C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Emitter Voltage TIP41 40 V TIP41A 60 V TIP41B 80 V TIP41C 100 V VCEO Collector-Emitter Voltage TIP41 40 V TI
8.4. Size:248K mcc
tip41 tip41a tip41b tip41c to-220.pdf
MCC Micro Commercial Components TM TIP41/41A/41B/41C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN The complementary PNP types are the TIP42 respectively Epoxy meets UL 94 V-0
8.5. Size:93K onsemi
tip41 tip41a tip41b tip41c tip42 tip42a tip42b tip42c.pdf
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http //onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE Features COMPLEMENTARY SILICON ESD Ratings Machine Model, C; > 400 V POWER TRANSISTORS Human Body Model, 3B; > 8000 V 40-60-80-100 VOLTS, Epoxy Meets U
8.6. Size:271K onsemi
tip41g tip41ag tip41bg tip41cg tip42g tip42ag tip42bg tip42cg.pdf
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) Complementary Silicon www.onsemi.com Plastic Power Transistors 6 AMPERE Designed for use in general purpose amplifier and switching applications. COMPLEMENTARY SILICON POWER TRANSISTORS Features Epoxy Meets UL 94 V-0 @ 0.125 in 40-60-80-100 VOLTS, These Devices are Pb-Free and are RoHS Complia
8.7. Size:215K utc
tip41c.pdf
UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURE * Complement to TIP42C SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Ha
8.8. Size:772K jiangsu
tip41 tip41a tip41b tip41c.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) TO-220-3L FEA TURES 1. BASE Medium Power Linear Switching Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Unit VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collecto
8.9. Size:436K kec
tip41cf.pdf
SEMICONDUCTOR TIP41CF TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Complementary to TIP42CF. _ A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L CHARACTERISTIC SYMBOL RATING UNIT R K
8.10. Size:67K kec
tip41c.pdf
SEMICONDUCTOR TIP41C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP42C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D 3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 VCBO L Collector-Base Voltage 100 V H 5.60 MAX C C J 1.37 MAX VCE
8.11. Size:203K lge
tip41 tip41a tip41b tip41c.pdf
TIP41/41A/41B/41C TO-220 Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V
8.12. Size:42K hsmc
htip41c.pdf
Spec. No. HE6707 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/4 HTIP41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP41C is designed for use in general purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature .................................
8.13. Size:678K jilin sino
tip41c.pdf
NPN NPN Epitaxial Silicon Transistor R TIP41C APPLICATIONS Medium Power Linear Switching Applications FEATURES V =100V (min) High collector voltage V =100V (min) CEO CEO TIP42C Complementary to TIP42C RoHS RoHS prod
8.14. Size:204K semtech
tip41c.pdf
TIP41C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 6 A Collector Current IC 10 A Collector Current (Pulse) ICP 2 A Base Current IB O
8.15. Size:229K first silicon
tip41c to220.pdf
SEMICONDUCTOR TIP41/41A/41B/41C TECHNICAL DATA A O C F E TIP41/41A/41B/41C TRANSISTOR (NPN) B DIM MILLIMETERS A 10.15 0.15 FEATURES B 15.30 MAX C 1.3 0.1/-0.15 P D 0.8 0.1 Medium Power Linear Switching Applications E 3.8 0.2 F 2.7 0.2 J H 0.4 0.15 D J 13.6 0.2 H N 2.54 0.2 N N O 4.5 0.2 1 2 3 P 2.7 0.2 1 BASE 2 COLLECTOR 3 EMITTER
8.16. Size:312K feihonltd
tip41ca.pdf
TRANSISTOR TIP41CA MAIN CHARACTERISTICS FEATURES IC 6A Epitaxial silicon VCEO 100V High switching speed PC 65W Complementary to TIP42CA TIP42CA APPLICATIONS RoHS RoHS product Medium Power Linear Switching Applications Pa
8.17. Size:492K cn evvo
tip41c.pdf
TIP41C Silicon NPN Epitaxial Transistor TIP41C TIP41C, the base island technology NPN power transistor, make this device suitable for audio,power linear and switching applications.The complementary PNP type is TIP42C Features Complementary PNP-NPN devices h grouping FE h improved linearity FE RoHS product Applications General purpose circuits Audio amplifi
8.18. Size:457K cn tuofeng
tip41a tip41b tip41c.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD TO-220 Plastic-Encapsulate Transistors TO-220 TIP41A/41B/41C TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM 2 W (Tamb=25 ) 3. EMITTER Collector current ICM 6 A 1 2 3 Collector-base voltage V(BR)CBO TIP41A 60 V TIP41B 80 V TIP41C 100 V Operating and storage junction te
8.19. Size:1277K cn sps
tip41 tip41a tip41b tip41c.pdf
TIP41/41A/41B/41C Silicon NPN Power Transistors DESCRIPTION DC Current Gain -h = 30(Min)@ I = -0.3A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- TIP41; 60V(Min)- TIP41A CEO(SUS) 80V(Min)- TIP41B; 100V(Min)- TIP41C Complement to Type TIP42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(T
8.20. Size:421K cn minos
tip41c.pdf
N P N S I L I C O N T R A N S I S T O R TIP41C T =25 a TO-220 T -55 150 stg T 150 j P =25 T 65W C
8.21. Size:421K cn sptech
tip41 tip41a tip41b tip41c.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistors TIP41/41A/41B/41C DESCRIPTION DC Current Gain -h = 30(Min)@ I = -0.3A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- TIP41; 60V(Min)- TIP41A CEO(SUS) 80V(Min)- TIP41B; 100V(Min)- TIP41C Complement to Type TIP42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer and switching appl
8.22. Size:180K inchange semiconductor
tip41 tip41a tip41b tip41c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP41/41A/41B/41C DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C Complement to Type TIP42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer
8.23. Size:210K inchange semiconductor
tip41c.pdf
isc Silicon NPN Power Transistors TIP41C DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP42C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RAT
Otros transistores... MP1526R, ST13003-K, STD888T4, STX616-AP, TIP31C-O, TIP31C-R, TIP31C-Y, TIP41C-O, D667, TIP41C-Y, TIP42C-O, TIP42C-R, TIP42C-Y, 2N3055T3BL, 2N3773T3BL, 2SA1492T4BL, 2SA1744T2TL
