2SC3997T7TL Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3997T7TL
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 250 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 4
Encapsulados: TO3PL
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2SC3997T7TL datasheet
2sc3997t7tl.pdf
2SC3997T7TL Silicon NPN Power Transistor DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector
2sc3997.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3997 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Ba
2sc3997.pdf
isc Silicon NPN Power Transistor 2SC3997 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
Otros transistores... 2SC2073T1TL, 2SC2246T3BL, 2SC2625T4TL, 2SC3320T4TL, 2SC3834T1TL, 2SC3835T4TL, 2SC3856T4TL, 2SC3907T4TL, TIP122, 2SC3998T7TL, 2SC4110T4TL, 2SC4131T5TL, 2SC4237T8TL, 2SC4552T2TL, 2SC5027T1TL, 2SC5198T7TL, 2SC5200T7TL
History: BT2951
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