2SC4131T5TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC4131T5TL
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 15 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 18(typ) MHz
   Capacitancia de salida (Cc): 210 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO3PML

Búsqueda de reemplazo de transistor bipolar 2SC4131T5TL

2SC4131T5TL Datasheet (PDF)

..1. Size:1282K cn sps
2sc4131t5tl.pdf

2SC4131T5TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1

7.1. Size:25K sanken-ele
2sc4131.pdf

LOW VCE (sat) 2SC4131Silicon NPN Epitaxial Planar TransistorApplication : DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC4131Unit Symbol Conditions 2SC4131 Unit0.20.2 5.515.60.23.45VCBO 100 VCB=100V 10max AV ICBOVCEO 50 IEBO VEB

7.2. Size:170K cn sptech
2sc4131.pdf

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4131DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: VCE(sat)= 0.5V(Max)@ IC= 5AAPPLICATIONSDesigned for DC-DC converter, emergencylighting inverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITVC

7.3. Size:217K inchange semiconductor
2sc4131.pdf

isc Silicon NPN Power Transistor 2SC4131DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050