2SA1260 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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JMnic Product Specification Silicon PNP Power Transistors 2SA1261 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SC3157 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220) and symbol3 BaseAbsolu

JMnic Product Specification Silicon PNP Power Transistors 2SA1262 DESCRIPTION With TO-220 package Complement to type 2SC3179 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbolAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION With TO-3P(I) package Complement to type 2SC3180N 2SA1263 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) S

JMnic Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SY

JMnic Product Specification Silicon PNP Power Transistors 2SA1264N DESCRIPTION With TO-3P(I) package Complement to type 2SC3181N 2SA1264 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) S

2SA1262Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)Unit SymbolSymbol 2SA1262 Conditions 2SA1262 Unit0.24.80.210.2VCBO V ICBO VCB=60V 100max A60 2.00.1VCEO V IEBO VEB=6V 100max

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1264DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181APPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1261DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3157APPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and high frequency p

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1265DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon PNP Power Transistor 2SA1261DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3157Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switchin

isc Silicon PNP Power Transistor 2SA1262DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = -0.6V(Max.)@I = -2ACE(sat) CComplement to Type 2SC3179Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIM

isc Silicon PNP Power Transistor 2SA1261-ZDESCRIPTIONHigh switching speedLow Collector-Emitter Saturation Voltage-: VCE(sat)= -0.6V(Max)@ IC= -5A100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC3157APPLICATIONSHigh speed high voltage switching industrial useDC/DC convertersABSOLUTE MAX

isc Silicon PNP Power Transistor 2SA1263DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage app

isc Silicon PNP Power Transistor 2SA1263NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage a

isc Silicon PNP Power Transistor 2SA1265DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app

isc Silicon PNP Power Transistor 2SA1264DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage app

isc Silicon PNP Power Transistor 2SA1265NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage a

isc Silicon PNP Power Transistor 2SA1264NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage a