BU941TT1TL Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU941TT1TL
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 300
Encapsulados: TO220C
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BU941TT1TL datasheet
..1. Size:1303K cn sps
bu941tt1tl.pdf 
BU941TT1TL Silicon NPN Power Transistor DESCRIPTION High Voltage DARLINGTON APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current- Continuous 15 A C I
8.1. Size:213K inchange semiconductor
bu941t.pdf
isc Silicon NPN Power Transistor BU941T DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V E
9.1. Size:286K 1
bu941zl bu941zg.pdf
UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION 1 TO-3P COIL DRIVER FEATURES 1 TO-220 * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS 1 * High ruggedness electric ignitions TO-263 INTERNAL SCHEMATIC DIAGRAM (2) C B(1) (3) E ORDERING INFORMATION Ordering Number
9.2. Size:87K st
bu941.pdf
BU941/BU941P BU941PFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON NPN DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE VERY RUGGED BIPOLAR TECHNOLOGY TO-3 HIGH OPERATING JUNCTION TEMPERATURE 1 WIDE RANGE OF PACKAGES 2 APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITIONS 3 3 2 2 1 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM for TO-3 Emitt
9.3. Size:89K st
bu941zt bu941ztfp bub941zt.pdf
BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX T4 ) 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC I
9.4. Size:413K st
bu941ztfp-zt bub941zt.pdf
BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX "T4") 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITI
9.5. Size:101K st
bu941p.pdf
BU941/BU941P BU941PFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE TO-3 VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION 1 TEMPERATURE 2 WIDE RANGE OF PACKAGES APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITIONS 3 3 2 2 1 1 TO-218 ISOWATT218 INTERNAL SCHEMA
9.6. Size:65K jmnic
bu941.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistor BU941 DESCRIPTION High Voltage DARLINGTON APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collect
9.7. Size:41K jmnic
bu941p.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors BU941P DESCRIPTION With TO-3PN package DARLINGTON High breakdown voltage APPLICATIONS High ruggedness electronic ignitions. High voltage ignition coil driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abso
9.8. Size:247K cystek
bu941zle3.pdf
Spec. No. C660E3 Issued Date 2014.01.09 CYStech Electronics Corp. Revised Date Page No. 1/6 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZLE3 IC 15A VCESAT(MAX) 1.6V Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivalent
9.9. Size:221K cystek
bu941ze3.pdf
Spec. No. C660E3 Issued Date 2010.02.03 CYStech Electronics Corp. Revised Date Page No. 1/5 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZE3 IC 15A RCESAT(MAX) 0.18 Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivale
9.10. Size:242K cystek
bu941zf3.pdf
Spec. No. C660F3 Issued Date 2010.10.01 CYStech Electronics Corp. Revised Date 2014.02.13 Page No. 1/6 NPN Epitaxial Planar Transistor BU941ZF3 Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivalent Circuit Outline TO-263
9.11. Size:220K cystek
bu941zfp.pdf
Spec. No. C660FP Issued Date 2008.05.20 CYStech Electronics Corp. Revised Date Page No. 1/5 NPN Epitaxial Planar Transistor BU941ZFP Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free package Applications High ruggedness electronic ignitions Equivalent Circuit Outline BU941ZFP TO-220FP C B E B
9.12. Size:243K cystek
bu941zp3.pdf
Spec. No. C660P3 Issued Date 2008.07.22 CYStech Electronics Corp. Revised Date 2011.01.04 Page No. 1/5 NPN Epitaxial Planar Transistor BVCEO 350V IC 15A BU941ZP3 VCESAT(MAX) 2V @12A Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions
9.13. Size:268K nell
bu941a-b.pdf
RoHS BU941 Series RoHS SEMICONDUCTOR Nell High Power Products NPN Power Darlington High Voltage lgnition Coil Driver, 15A, 400V FEATURES C NPN Darlington C Integrated antiparallel Collector-Emitter Diode Very rugged bipolar technology High operating junction temperature B CE B C E APPLICATIONS High ruggedness electronic ignitions TO-3P(B) TO-220AB (BU941A) (BU941
9.14. Size:1286K cn sps
bu941pt4tl.pdf
BU941PT4TL Silicon NPN Power Transistor DESCRIPTION High Voltage DARLINGTON APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (TB B=25 ) a SYMBOL PARAMETER VALUE UNIT VB B Collector-Base Voltage 500 V CBO VB B Collector-Emitter Voltage 400 V CEO VB B Emitter-Base Voltage 5 V EBO IB B Collector Current- Continu
9.15. Size:190K cn sptech
bu941p.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU941P DESCRIPTION High Voltage DARLINGTON APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (TB B=25 ) a SYMBOL PARAMETER VALUE UNIT VB B Collector-Base Voltage 500 V CBO VB B Collector-Emitter Voltage 400 V CEO VB B Emitter-Base Voltage 5 V EBO
9.16. Size:235K inchange semiconductor
bu941zl.pdf
isc Silicon NPN Darlington Power Transistor BU941ZL DESCRIPTION Built In Clamping Zener High Operating Junction Temperature Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electric ignitions ABSOLUTE MAXIMUM RATINGS(TB B=25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 350 V CEO VB Emitter-Base
9.17. Size:226K inchange semiconductor
bu941zpfi.pdf
isc Silicon NPN Darlington Power Transistor BU941ZPFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T
9.18. Size:211K inchange semiconductor
bu941zt.pdf
isc Silicon NPN Power Transistor BU941ZT DESCRIPTION High Voltage DARLINGTON Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage
9.19. Size:146K inchange semiconductor
bu941.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU941 DESCRIPTION High Voltage DARLINGTON APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Volta
9.20. Size:218K inchange semiconductor
bu941zp.pdf
isc Silicon NPN Darlington Power Transistor BU941ZP DESCRIPTION Built In Clamping Zener High Operating Junction Temperature Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in automotive environment as electronic ignition power actuators. ABSOLUTE MAXIMUM RATINGS(TB B=25 ) a SYMBOL PARAMETER VALUE UNIT V Colle
9.21. Size:221K inchange semiconductor
bu941p.pdf
isc Silicon NPN Power Transistor BU941P DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (TB B=25 ) a SYMBOL PARAMETER VALUE UNIT VB B Collector-Base Voltage 500 V CBO VB B Collector-Emitter Voltage 400 V
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