BU941TT1TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BU941TT1TLSilicon NPN Power TransistorDESCRIPTIONHigh VoltageDARLINGTONAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current- Continuous 15 ACI

isc Silicon NPN Power Transistor BU941TDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV E

UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION 1TO-3PCOIL DRIVER FEATURES 1TO-220* NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS 1* High ruggedness electric ignitions TO-263 INTERNAL SCHEMATIC DIAGRAM (2) CB(1)(3) E ORDERING INFORMATION Ordering Number

BU941/BU941PBU941PFI HIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON NPN DARLINGTON INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE VERY RUGGED BIPOLAR TECHNOLOGYTO-3 HIGH OPERATING JUNCTIONTEMPERATURE1 WIDE RANGE OF PACKAGES2APPLICATIONS HIGH RUGGEDNESS ELECTRONICIGNITIONS33221 1TO-218 ISOWATT218INTERNAL SCHEMATIC DIAGRAMfor TO-3Emitt

BU941ZT/BU941ZTFPBUB941ZT HIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263)3 3POWER PACKAGE IN TUBE (NO SUFFIX)2 2OR IN TAPE & REEL (SUFFIX T4)1 1TO-220 TO-220FPAPPLICATIONS HIGH RUGGEDNESS ELECTRONICI

BU941ZT/BU941ZTFPBUB941ZTHIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263)3 3POWER PACKAGE IN TUBE (NO SUFFIX)2 2OR IN TAPE & REEL (SUFFIX "T4")1 1TO-220 TO-220FPAPPLICATIONS HIGH RUGGEDNESS ELECTRONICIGNITI

BU941/BU941PBU941PFIHIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODETO-3 VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION1TEMPERATURE2 WIDE RANGE OF PACKAGESAPPLICATIONS HIGH RUGGEDNESS ELECTRONICIGNITIONS33221 1TO-218 ISOWATT218INTERNAL SCHEMA

Product Specification www.jmnic.com Silicon NPN Power Transistor BU941 DESCRIPTION High Voltage DARLINGTON APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 5 VIC Collect

Product Specification www.jmnic.com Silicon NPN Power Transistors BU941P DESCRIPTION With TO-3PN package DARLINGTON High breakdown voltage APPLICATIONS High ruggedness electronic ignitions. High voltage ignition coil driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbso

Spec. No. : C660E3 Issued Date : 2014.01.09 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 350VBU941ZLE3 IC 15AVCESAT(MAX) 1.6VFeatures High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivalent

Spec. No. : C660E3 Issued Date : 2010.02.03 CYStech Electronics Corp.Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350VBU941ZE3 IC 15ARCESAT(MAX) 0.18 Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivale

Spec. No. : C660F3 Issued Date : 2010.10.01 CYStech Electronics Corp.Revised Date : 2014.02.13 Page No. : 1/6 NPN Epitaxial Planar Transistor BU941ZF3 Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivalent Circuit Outline TO-263

Spec. No. : C660FP Issued Date : 2008.05.20 CYStech Electronics Corp.Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BU941ZFP Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free package Applications High ruggedness electronic ignitions Equivalent Circuit Outline BU941ZFP TO-220FP C B E B

Spec. No. : C660P3 Issued Date : 2008.07.22 CYStech Electronics Corp.Revised Date :2011.01.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350VIC 15ABU941ZP3 VCESAT(MAX) 2V @12AFeatures High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions

RoHS BU941 Series RoHS SEMICONDUCTORNell High Power ProductsNPN Power DarlingtonHigh Voltage lgnition Coil Driver, 15A, 400V FEATURESC NPN Darlington CIntegrated antiparallel Collector-Emitter DiodeVery rugged bipolar technologyHigh operating junction temperatureBCEBCE APPLICATIONS High ruggedness electronic ignitions TO-3P(B) TO-220AB (BU941A) (BU941

BU941PT4TLSilicon NPN Power TransistorDESCRIPTIONHigh VoltageDARLINGTONAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (TB B=25)aSYMBOL PARAMETER VALUE UNITVB B Collector-Base Voltage 500 VCBOVB B Collector-Emitter Voltage 400 VCEOVB B Emitter-Base Voltage 5 VEBOIB B Collector Current- Continu

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU941PDESCRIPTIONHigh VoltageDARLINGTONAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (TB B=25)aSYMBOL PARAMETER VALUE UNITVB B Collector-Base Voltage 500 VCBOVB B Collector-Emitter Voltage 400 VCEOVB B Emitter-Base Voltage 5 VEBO

isc Silicon NPN Darlington Power Transistor BU941ZLDESCRIPTIONBuilt In Clamping ZenerHigh Operating Junction TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electric ignitionsABSOLUTE MAXIMUM RATINGS(TB B=25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 350 VCEOVB Emitter-Base

isc Silicon NPN Darlington Power Transistor BU941ZPFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor BU941ZTDESCRIPTIONHigh VoltageDARLINGTONMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU941 DESCRIPTION High Voltage DARLINGTON APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Volta

isc Silicon NPN Darlington Power Transistor BU941ZPDESCRIPTIONBuilt In Clamping ZenerHigh Operating Junction TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in automotive environment aselectronic ignition power actuators.ABSOLUTE MAXIMUM RATINGS(TB B=25)aSYMBOL PARAMETER VALUE UNITV Colle

isc Silicon NPN Power Transistor BU941PDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (TB B=25)aSYMBOL PARAMETER VALUE UNITVB B Collector-Base Voltage 500 VCBOVB B Collector-Emitter Voltage 400 V