2SA1262. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SA1262 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1262

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 15 MHz

Capacitancia de salida (Cc): 90 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO220

Búsqueda de reemplazo de 2SA1262

- Selecciónⓘ de transistores por parámetros

2SA1262 datasheet

..1. Size:183K jmnic
2sa1262.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1262 DESCRIPTION With TO-220 package Complement to type 2SC3179 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

..2. Size:23K sanken-ele
2sa1262.pdf pdf_icon

..3. Size:214K inchange semiconductor
2sa1262.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1262 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage V = -0.6V(Max.)@I = -2A CE(sat) C Complement to Type 2SC3179 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIM

8.1. Size:94K toshiba
2sa1263.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.2. Size:94K toshiba
2sa1265.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.3. Size:95K toshiba
2sa1264.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.4. Size:56K no
2sa1261.pdf pdf_icon

8.5. Size:160K jmnic
2sa1261.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1261 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SC3157 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220) and symbol 3 Base Absolu

8.6. Size:198K jmnic
2sa1263n.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION With TO-3P(I) package Complement to type 2SC3180N 2SA1263 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) S

8.7. Size:201K jmnic
2sa1265n.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SY

8.8. Size:198K jmnic
2sa1264n.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1264N DESCRIPTION With TO-3P(I) package Complement to type 2SC3181N 2SA1264 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) S

8.9. Size:41K kec
2sa1266.pdf pdf_icon

8.10. Size:195K cn sptech
2sa1264r 2sa1264o.pdf pdf_icon

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1264 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

8.11. Size:195K cn sptech
2sa1261m 2sa1261l 2sa1261k.pdf pdf_icon

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1261 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3157 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency p

8.12. Size:195K cn sptech
2sa1265r 2sa1265o.pdf pdf_icon

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1265 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

8.13. Size:219K inchange semiconductor
2sa1261.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1261 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3157 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switchin

8.14. Size:186K inchange semiconductor
2sa1261-z.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1261-Z DESCRIPTION High switching speed Low Collector-Emitter Saturation Voltage- VCE(sat)= -0.6V(Max)@ IC= -5A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC3157 APPLICATIONS High speed high voltage switching industrial use DC/DC converters ABSOLUTE MAX

8.15. Size:221K inchange semiconductor
2sa1263.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1263 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC3180 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage app

8.16. Size:222K inchange semiconductor
2sa1263n.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1263N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC3180N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage a

8.17. Size:220K inchange semiconductor
2sa1265.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1265 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app

8.18. Size:220K inchange semiconductor
2sa1264.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1264 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage app

8.19. Size:222K inchange semiconductor
2sa1265n.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1265N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage a

8.20. Size:222K inchange semiconductor
2sa1264n.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1264N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage a

Otros transistores... 2SA1257G3 , 2SA1257G4 , 2SA1257G5 , 2SA1258 , 2SA1259 , 2SA126 , 2SA1260 , 2SA1261 , 2SB817 , 2SA1263 , 2SA1263N , 2SA1263NO , 2SA1263NR , 2SA1264 , 2SA1264N , 2SA1264NO , 2SA1264NR .