MMBTA06-AU Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTA06-AU
Código: B06
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT23
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MMBTA06-AU datasheet
..1. Size:394K panjit
mmbta05-au mmbta06-au mmbta55-au mmbta56-au.pdf 
PMMBTA05-AU / MMBTA06-AU / MMBTA55-AU / MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit inch(mm) 60 80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA AEC-Q101 qualified Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (
7.1. Size:82K motorola
mmbta05l mmbta06.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA05LT1/D MMBTA05LT1 Driver Transistors MMBTA06LT1* NPN Silicon COLLECTOR *Motorola Preferred Device 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector Emitter Voltage VCEO 60 80 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 80 Vdc Emit
7.2. Size:203K fairchild semi
mpsa06 mmbta06 pzta06.pdf
March 2011 MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 33. MPSA06 MMBTA06 PZTA06 C C E E C B TO-92 SOT-23 SOT-223 B Mark 1G EBC Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Colle
7.3. Size:891K fairchild semi
mmbta06.pdf
MPSA06 MMBTA06 PZTA06 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Volta
7.4. Size:250K diodes
mmbta05 mmbta06.pdf
MMBTA05 / MMBTA06 NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Low Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Complementary PNP Type MMBTA55 & MMBTA56 Totally Lead-Free & Fully RoHS compliant
7.5. Size:529K infineon
smbta06 mmbta06.pdf
SMBTA06/MMBTA06 NPN Silicon AF Transistor Low collector-emitter saturation voltage 2 3 Complementary type 1 SMBTA 56 / MMBTA56 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1G SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 80 V Collector-emitter voltage VCEO 80 Colle
7.6. Size:763K mcc
mmbta05 mmbta06.pdf
M C C MMBTA05 TM Micro Commercial Components Micro Commercial Components THRU 20736 Marilla Street Chatsworth CA 91311 MMBTA06 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Epitaxial Planar Die Construction NPN Small Signal Complementary PNP Types Available (MMBTA55/MMBTA56) General Purpose Ideal
7.8. Size:133K onsemi
mmbta06wt1.pdf
MMBTA06WT1G Driver Transistor NPN Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model -- 4 kV ESD Rating Machine Model -- 400 V http //onsemi.com Features COLLECTOR 3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit 3 Collector -- Emitter Voltage VCEO 80 Vdc Collector -- Bas
7.9. Size:98K onsemi
mmbta05l mmbta06l.pdf
MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector
7.10. Size:103K onsemi
mmbta05lt1 mmbta06lt1.pdf
MMBTA05LT1G, MMBTA06LT1G Driver Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO Vdc EMITTER MMBTA05LT1 60 MMBTA06LT1 80 3 Collector-Base Voltage VCBO Vdc MMBTA05LT1 60 1 MMBTA06LT1 80 2 Emitter-Base Vo
7.11. Size:114K onsemi
mmbta06lt3g.pdf
MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 3
7.12. Size:193K onsemi
mmbta06w smmbta06w.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
7.13. Size:398K onsemi
mpsa06 mmbta06 pzta06.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.14. Size:111K onsemi
mmbta06wt1g.pdf
MMBTA06WT1G, SMMBTA06WT1G, Driver Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model - 4 kV ESD Rating Machine Model - 400 V Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique SC-70 Site and Control Change Requirements CASE 419 These Devices are Pb-Free, Halogen
7.15. Size:114K onsemi
mmbta06lt1g.pdf
MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 3
7.16. Size:212K utc
mmbta06.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage VCEO=80V * Collector Dissipation PD=350mW 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBTA06G-AE3-R SOT-23 E B C Tape Reel Note Pin Assignment E Emitter B Base C Collector
7.17. Size:460K secos
mmbta06.pdf
MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 High Voltage Application A Telephone Application L Complementary to MMBTA56 3 3 Top View C B 1 1 2 MARKING 2 K E 1GM D H J F G PACKAGE INFORMATION Package MPQ Leader Size Mi
7.18. Size:950K jiangsu
mmbta06.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR (NPN) SOT 23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING 1GM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Volta
7.19. Size:84K kec
mmbta06.pdf
SEMICONDUCTOR MMBTA06 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. E L B L FEATURE DIM MILLIMETERS _ + A 2.93 0.20 Complementary to MMBTA56. B 1.30+0.20/-0.15 C 1.30 MAX Suffix U Qualified to AEC-Q101. 2 3 D 0.40+0.15/-0.05 ex) MMBTA06-RTK/HU E 2.40+0.30/-0.20 G 1.90 1 H 0.95 J 0.13+0.10/-0.05 K
7.20. Size:2194K htsemi
mmbta06.pdf
MMBTA06 TRANSISTOR(NPN) FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING 1GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit SOT 23 V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current 500 mA C P Collector P
7.21. Size:269K gsme
mmbta06.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA06 MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit Collector-Base voltage VCBO 80 Vdc
7.22. Size:161K lge
mmbta05 mmbta06.pdf
MMBTA05/MMBTA06 NPN General Purpose Transistor SOT-23 Features Epitaxial planar die construction. Complementary PNP type available (MMBTA55/MMBTA56). Also available in lead free version. Applications Dimensions in inches and (millimeters) Ideal for medium power amplification and switching Ordering Information Type No. Marking Package Code MMBTA05 1H SOT-23 M
7.24. Size:106K first silicon
mmbta06lt1g.pdf
SEMICONDUCTOR MMBTA05/06 TECHNICAL DATA Driver Transistors FEATURES We declare that the material of product 3 compliance with RoHS requirements. 2 MAXIMUM RATINGS 1 Value Rating Symbol MMBTA05 MMBTA06 Unit SOT 23 Collector Emitter Voltage V 60 80 Vdc CEO Collector Base Voltage V 60 80 Vdc CBO Emitter Base Voltage V 4.0 Vdc EBO Collector Current Continuous I
7.25. Size:109K first silicon
mmbta06.pdf
SEMICONDUCTOR MMBTA05/06 TECHNICAL DATA Driver Transistors FEATURES We declare that the material of product compliance with RoHS requirements. DEVICE MARKING MMB = 1H , MMBTA06 = 1GM TA05 3 2 MAXIMUM RATINGS 1 Value Rating Symbol MMBTA05 MMBTA06 Unit SOT 23 Collector Emitter Voltage V 60 80 Vdc CEO Collector Base Voltage V 60 80 Vdc CBO Emitter Base Voltage V 4
7.26. Size:1118K kexin
mmbta06.pdf
SMD Type Transistors NPN Transistors MMBTA06 (KMBTA06) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features For Switching and Amplifier Applications Complementary to MMBTA56 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Col
7.27. Size:273K panjit
mmbta06w.pdf
PMMBTA06W NPN High Voltage Transistor 80V 225mW Voltage Power Features NPN silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case SOT-323 Package Terminals Solderable per MIL-STD-750, Method 2026 Appr
7.28. Size:483K panjit
mmbta05 mmbta06 mmbta55 mmbta56.pdf
PMMBTA05 / MMBTA06 / MMBTA55 / MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit inch(mm) 60 80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case SOT-23 Package Terminals Solderable
7.29. Size:465K tiptek
mmbta05w mmbta06w.pdf
MMBTA05W/MMBTA06W GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = 500 mA PB FREE PRODUCT ARE AVAILABLE 98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTIVE REQUEST MECHANICAL DATA CASE SOT-323 TERMINALS SOLDERABLE PER MIL-STD-202G, MET
7.30. Size:678K umw-ic
mmbta06.pdf
R UMW UMW MMBTA06 SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR (NPN) SOT-23 FEATURES For Switching and Amplifier Applications 1. BASE Complementary Type PNP Transistor MMBTA56 2. EMITTER MARKING 1GM 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO V Collector-Emitter V
7.31. Size:2575K fms
mmbta06.pdf
SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBTA06 TRANSISTOR (NPN) FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 SOT 23 MARKING 1GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO 1. BASE V Collector-Emitter Voltage 80 V CEO 2. EMITTER V Em
7.34. Size:993K cn zre
mmbta06.pdf
MMBTA06 TRANSISTOR(NPN) SOT-23 SOT-23 Plastic-Encapsulate Transistors SOT-23 Features For Switching and Amplifier Applications MMBTA56 ; Complementary to MMBTA56 300mW; Power Dissipation of 300mW High Stability and High Reliability Me
7.35. Size:290K cn yangzhou yangjie elec
mmbta05 mmbta06.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBTA05 THRU MMBTA06 NPN General Purpose Amplifier transistors Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Moldi
7.36. Size:249K cn yangzhou yangjie elec
mmbta06q.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBTA06Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications NPN General Purpose Amplifier Mechanical Data Case SOT-23 Terminals Tin plated leads, solde
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