MMBTSC945-H Todos los transistores

 

MMBTSC945-H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBTSC945-H
   Código: CR
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 3(max) pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de MMBTSC945-H

   - Selección ⓘ de transistores por parámetros

 

MMBTSC945-H Datasheet (PDF)

 ..1. Size:710K  pjsemi
mmbtsc945-l mmbtsc945-h.pdf pdf_icon

MMBTSC945-H

MMBTSC945 NPN Transistor SOT-23 Features (TO-236) Excellent hFE Linearity Low noise1.Base 2.Emitter 3.CollectorMarking: CRAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 5 V EBOCollector Curr

 5.1. Size:130K  semtech
mmbtsc945r mmbtsc945o mmbtsc945y mmbtsc945p mmbtsc945l.pdf pdf_icon

MMBTSC945-H

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

 8.1. Size:282K  semtech
mmbtsc4098w.pdf pdf_icon

MMBTSC945-H

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VCollector Current IC 50 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

 8.2. Size:141K  semtech
mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf pdf_icon

MMBTSC945-H

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

Otros transistores... MMBTSC1623-L4 , MMBTSC1623-L5 , MMBTSC1623-L6 , MMBTSC1623-L7 , MMBTSC3875-G , MMBTSC3875-L , MMBTSC3875-O , MMBTSC3875-Y , BC327 , MMBTSC945-L , MMDT2907ASG , MMDT3904SG , MMDT3906SG , MMBT3904H , MMBT3906H , 2SA1163BL , 2SA1163GR .

 

 
Back to Top

 


 
.