2SA1265 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SA1265
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 140 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 30 MHz
   Capacitancia de salida (Cc): 480 pF
   Ganancia de corriente contínua (hfe): 55
   Paquete / Cubierta: TO218

Búsqueda de reemplazo de transistor bipolar 2SA1265

2SA1265 Datasheet (PDF)

..1. Size:94K toshiba
2sa1265.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

..2. Size:220K inchange semiconductor
2sa1265.pdf

isc Silicon PNP Power Transistor 2SA1265DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app

0.1. Size:201K jmnic
2sa1265n.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SY

0.2. Size:195K cn sptech
2sa1265r 2sa1265o.pdf

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1265DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

0.3. Size:222K inchange semiconductor
2sa1265n.pdf

isc Silicon PNP Power Transistor 2SA1265NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage a

Otros transistores... 2SA1263 , 2SA1263N , 2SA1263NO , 2SA1263NR , 2SA1264 , 2SA1264N , 2SA1264NO , 2SA1264NR , D965 , 2SA1265N , 2SA1265NO , 2SA1265NR , 2SA1266 , 2SA1267 , 2SA1268 , 2SA1269 , 2SA127 .

History: 2SA1290S

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050