MMDT3906SG Todos los transistores

 

MMDT3906SG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMDT3906SG
   Código: 3906
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 4.5(max) pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23-6

 Búsqueda de reemplazo de transistor bipolar MMDT3906SG

 

MMDT3906SG Datasheet (PDF)

 ..1. Size:1194K  pjsemi
mmdt3906sg.pdf

MMDT3906SG MMDT3906SG

MMDT3906SG Double PNP Transistors Features SOT-23-6 For switching and amplifier applications4.C25.E13.B26.C12.E2Equivalent Circuit 1.B1Marking Code3906Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage -V 40 VCBOCollector Emitter Voltage -V 40 VCEOEmitter Base Vol

 6.1. Size:441K  diodes
mmdt3906.pdf

MMDT3906SG MMDT3906SG

MMDT3906 40V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > -40V Case: SOT363 IC = -200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Lev

 6.2. Size:178K  diodes
mmdt3906v.pdf

MMDT3906SG MMDT3906SG

MMDT3906V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 1) BC Qualified to AEC-Q101 Standards for High Reliability B 1.10 1.25 1.20

 6.3. Size:207K  diodes
mmdt3906vc.pdf

MMDT3906SG MMDT3906SG

MMDT3906VCLead-free GreenDUAL PNP SMALL SIGNAL SURFACE MOUNTTRANSISTORFeatures Epitaxial Planar Die ConstructionA Ideal for Low Power Amplification and SwitchingC1 B2 E2 Ultra-Small Surface Mount PackageSOT-563 Lead Free By Design/RoHS Compliant (Note 1)BC Dim Min Max Typ "Green" Device (Note 4)A0.15 0.30 0.25E1 B1 C2B1.10 1.25 1.20Mechanic

 6.4. Size:1058K  mcc
mmdt3906.pdf

MMDT3906SG MMDT3906SG

MMDT3906Features Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operatin

 6.5. Size:736K  mcc
mmdt3906v.pdf

MMDT3906SG MMDT3906SG

MMDT3906VFeatures Ideal for Low Power Amplification and Switching Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSTransistorsCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Oth

 6.6. Size:229K  mcc
mmdt3906v sot-563.pdf

MMDT3906SG MMDT3906SG

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMDT3906VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tran

 6.7. Size:250K  mcc
mmdt3906 sot-363.pdf

MMDT3906SG MMDT3906SG

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3906Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Ideal for Low Power Amplification and Switching Small Signal Surface Ultra-small Surface Mount Packa

 6.8. Size:234K  secos
mmdt3906.pdf

MMDT3906SG MMDT3906SG

MMDT3906PNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363 * Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REFPower dissipation.O.053(1.35.096(2.45) PCM : 0.2 W (Tamp.=25 C).045(1.15.085(2.15)Collector current.018(0.46).010(0.26)ICM : - 0.2 A

 6.9. Size:347K  jiangsu
mmdt3906.pdf

MMDT3906SG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors SOT-363 MMDT3906 DUAL TRANSISTOR(PNP) FEATURES Epitaxial planar die construction Ideal for low power amplification and switching 1 MARKING:K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitte

 6.10. Size:228K  lge
mmdt3906.pdf

MMDT3906SG MMDT3906SG

MMDT3906SOT-363 Dual Transistor(PNP)SOT-363Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K3N Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO -5

 6.11. Size:786K  kexin
mmdt3906.pdf

MMDT3906SG

SMD Type TransistorsPNP TransistorsMMDT3906 (KMDT3906) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current -

 6.12. Size:391K  panjit
mmdt3906.pdf

MMDT3906SG MMDT3906SG

MMDT3906DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 200 mWattVOLTAGEFEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC = -200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic

 6.13. Size:608K  slkor
mmdt3906.pdf

MMDT3906SG MMDT3906SG

MMDT3906 Dual PNP Small Signal TransistorsMMDT3906 Epoxy meets UL 94 V-0 flammability rating Lead Free Finish/RoHS Compliant For Switching and AF Amplifier Applications Rugged and reliable Maximum Ratings Ta = 25 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V

 6.14. Size:2053K  cn twgmc
mmdt3906.pdf

MMDT3906SG MMDT3906SG

MMDT3906MMDT3906MMDT3906MMDT39 0 6 DUAL TRANSISTOR(PNP+ PNP)SOT-363 6 54FEATURES 1Epitaxial planar die construction 23Ideal for low power amplification and switching MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Vo

 6.15. Size:329K  cn yangzhou yangjie elec
mmdt3906.pdf

MMDT3906SG MMDT3906SG

RoHS COMPLIANT MMDT3906 Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363 P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: K3N Equivalent circuit 1 / 5 S-S2844 Yangzhou

 6.16. Size:1032K  cn doeshare
mmdt3906.pdf

MMDT3906SG MMDT3906SG

MMDT3906 MMDT3906 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (PNP+PNP) Complementary to MMDT3904 Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V

 6.17. Size:681K  cn cbi
mmdt3906dw.pdf

MMDT3906SG MMDT3906SG

SOT-363 Plastic-Encapsulate TransistorsSOT-363 DUAL TRANSISTOR (PNP+PNP) MMDT3906DWFEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO

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