HN1B04FE-GR
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HN1B04FE-GR
Código: 1DG
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
ES6
Búsqueda de reemplazo de transistor bipolar HN1B04FE-GR
HN1B04FE-GR
Datasheet (PDF)
..1. Size:339K toshiba
hn1b04fe-y hn1b04fe-gr.pdf
HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120 to 400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: High voltage
6.1. Size:313K toshiba
hn1b04fe.pdf
HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: High voltage and
7.1. Size:297K toshiba
hn1b04f.pdf
HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mmAudio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity : hFE(2) = 25 (min) at VCE = -6V, IC = -400mA Q2: Excellent hFE linearity : hFE(2) = 25 (min) at VCE = 6V
7.2. Size:390K toshiba
hn1b04fu.pdf
HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : V = 50V, I = 150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE CQ2:
Otros transistores... 2N3200
, 2N3201
, 2N3202
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, 2N3204
, 2N3205
, 2N3206
, 2N3207
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, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.