HN1B04FE-GR Todos los transistores

 

HN1B04FE-GR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HN1B04FE-GR
   Código: 1DG
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: ES6

 Búsqueda de reemplazo de transistor bipolar HN1B04FE-GR

 

HN1B04FE-GR Datasheet (PDF)

 ..1. Size:339K  toshiba
 hn1b04fe-y hn1b04fe-gr.pdf pdf_icon

HN1B04FE-GR

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 to 400 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2 High voltage

 6.1. Size:313K  toshiba
 hn1b04fe.pdf pdf_icon

HN1B04FE-GR

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2 High voltage and

 7.1. Size:297K  toshiba
 hn1b04f.pdf pdf_icon

HN1B04FE-GR

HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1 Excellent hFE linearity hFE(2) = 25 (min) at VCE = -6V, IC = -400mA Q2 Excellent hFE linearity hFE(2) = 25 (min) at VCE = 6V

 7.2. Size:390K  toshiba
 hn1b04fu.pdf pdf_icon

HN1B04FE-GR

HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current V = 50V, I = 150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE C Q2

MOSTRAR MÁS

Otros transistores... 2SC5066O , 2SC5066Y , 2SC5084O , 2SC5084Y , 2SC6026MFV-GR , 2SC6026MFV-Y , HN1A01FE-GR , HN1A01FE-Y , BC556 , HN1B04FE-Y , 2N25550 , 2N25551 , 2SA1015G , 2SA1015O , 2SA1015Y , 2SA733L , 2SA733O .

 

 
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