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8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

Continental Device India Pvt. Limited An IATF 16949, ISO9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS CD8050 TO-92 Leaded Package RoHS compliant ABSOLUTE MAXIMUM RATINGS (Ta = 25 OC) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 40 V Collector -Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 2 A Collector Power Dissipat

MCC Micro Commercial Components TM S8050-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8050-C Phone (818) 701-4933 Fax (818) 701-4939 S8050-D Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating an

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Spec. No. C223A3-B Issued Date 2004.02.18 CYStech Electronics Corp. Revised Date 2012.10.03 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTN8050BA3 Description The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features High collector current , I = 1.5A C Low V CE(sat) Complementa

S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper

Jiangsu Weida Semiconductor Co., Ltd. S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit VCEO Collector-Emitter Voltage 25 Vdc VCBO Collector-Base Voltage 40 Vdc VEBO Emitter-Base VOltage 5.0 Vdc Collector Current IC 500 mAdc PD Total Device Dissipation T =25 C 0.625 W A Junction Te

Jiangsu Weida Semiconductor Co., Ltd. SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation