8550D Todos los transistores

8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage

8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Co

S8550-B MCC Micro Commercial Components TM S8550-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8550-D Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating a

DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor TO-92-3 CASE 135AN SS8550 1 2 3 Features 2 W Output Amplifier of Portable Radios in Class B Push-Pull Operation Complementary to SS8050 TO-92-3 Collector Current IC = 1.5 A CASE 135AR 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 3 Compliant 1. Emitter 2. Base ABSOLUTE MAXIMUM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Bas

SMD Type Transistors SMD Type PNP Transistors KST8550D-50 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-1.2A Collector Emitter Voltage VCEO=-50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V C

SMD Type Transistors SMD Type PNP Transistors KST8550D SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features 1 2 Collector Current IC=-1.5A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage

SMD Type Transistors PNP Transistors H8550D Features 1.70 0.1 Collector Power Dissipation PC=0.5W Collector Current IC=-1.5A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current IC -1

TRANSISTOR S8550DA MAIN CHARACTERISTICS FEATURES IC -1.5A Epitaxial silicon VCEO -45V High switching speed PC 1W S8050DA Complementary to S8050DA RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power am

MMBT8550C/D Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages As complementary type of the NPN transistor MMBT8050C/D is recommended Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base V

MMBT8550-1.5A PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. Especially Suitable for AF-Driver Stages and Low Power Output Stages. As Complementary Type of the NPN Transistor MMBT8050-1.5A is Recommended. 1.Base 2.Emitter 3.Collector Marking -C X2 -D Y2 Absolute Maximum Ratings Ratings at 25 ambient temperature unless other

PXT8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 1.5 A Power Dissipation Ptot

PXT8550 PXT8550 PXT8550 PXT8550 TRANSISTOR (PNP) SOT-89 FEATURES Compliment to PXT8050 MARKING Y2 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO VCEO Collector-Emitter Voltage -25 V V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -1.5 A C P Collector Power

Jiangsu Weida Semiconductor Co., Ltd. S8550 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation T

Jiangsu Weida Semiconductor Co., Ltd. SS8550 Plastic-Encapsulate Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol SS8550 Unit Collector-Emitter Voltage V CEO -25 Vdc VCBO Collector-Base Voltage -40 Vdc VEBO Emitter-Base Voltage -5.0 Vdc Collector Current Adc IC -1.5 Total De