MMBT9012H-H23 Todos los transistores

 

MMBT9012H-H23 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT9012H-H23
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO236
 

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MMBT9012H-H23 Datasheet (PDF)

 ..1. Size:120K  semtech
 mmbt9012h-h23.pdf pdf_icon

MMBT9012H-H23

MMBT9012H-H23 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

 3.1. Size:120K  semtech
 mmbt9012h-h35.pdf pdf_icon

MMBT9012H-H23

MMBT9012H-H35 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWJunction Temperature Tj 150

 5.1. Size:173K  semtech
 mmbt9012g mmbt9012h.pdf pdf_icon

MMBT9012H-H23

MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C O

 5.2. Size:1743K  pjsemi
 mmbt9012g mmbt9012h.pdf pdf_icon

MMBT9012H-H23

MMBT9012 PNP Transistor Features SOT-23 For Switching and AF Amplifer Applications.Equivalent Circuit 1.Base 2.Emitter 3.Collector3.CollectorMarking Code : MMBT9012G : K2 1.BaseMMBT9012H : K32. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage -V 40 VCBOCollec

MOSTRAR MÁS

Otros transistores... 9014C , 9018G , BCX56-10U , BCX56-16U , MMBT3331 , MMBT5401-HAF , MMBT8050CW , MMBT8050DW , A1015 , MMBT9012H-H35 , MMBT9013G , MMBT9013H , MMBT9013H-H23 , MMBT9014B , MMBT9014C , MMBT9014C1 , MMBT9014D .

History: D43C10 | UN4224

 

 
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