MMBT9012H-H23 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT9012H-H23

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 200

Encapsulados: TO236

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MMBT9012H-H23 datasheet

 ..1. Size:120K  semtech
 mmbt9012h-h23.pdf pdf_icon

MMBT9012H-H23

MMBT9012H-H23 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C

 3.1. Size:120K  semtech
 mmbt9012h-h35.pdf pdf_icon

MMBT9012H-H23

MMBT9012H-H35 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150

 5.1. Size:173K  semtech
 mmbt9012g mmbt9012h.pdf pdf_icon

MMBT9012H-H23

MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O

 5.2. Size:1743K  pjsemi
 mmbt9012g mmbt9012h.pdf pdf_icon

MMBT9012H-H23

MMBT9012 PNP Transistor Features SOT-23 For Switching and AF Amplifer Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code MMBT9012G K2 1.Base MMBT9012H K3 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collec

MOSTRAR MÁS

Otros transistores... 9014C, 9018G, BCX56-10U, BCX56-16U, MMBT3331, MMBT5401-HAF, MMBT8050CW, MMBT8050DW, TIP41, MMBT9012H-H35, MMBT9013G, MMBT9013H, MMBT9013H-H23, MMBT9014B, MMBT9014C, MMBT9014C1, MMBT9014D