MMBT9014B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT9014B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 max pF

Ganancia de corriente contínua (hFE): 110

Encapsulados: TO236

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MMBT9014B datasheet

 ..1. Size:66K  semtech
mmbt9014b mmbt9014c mmbt9014d.pdf pdf_icon

MMBT9014B

MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA

 6.1. Size:172K  utc
mmbt9014.pdf pdf_icon

MMBT9014B

UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES * High Total Power Dissipation. (450mW) 1 * Excellent hFE Linearity. 2 * Complementary to UTC MMBT9015 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT9014G-x-AE3-R SOT-23 E B C Tape Reel Note Pin

 6.2. Size:78K  semtech
mmbt9014c1.pdf pdf_icon

MMBT9014B

MMBT9014C1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO

 6.3. Size:136K  wej
mmbt9014lt1.pdf pdf_icon

MMBT9014B

RoHS MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to MMPT9015LT1 Collector-current Ic=100mA 2 Collector-Emiller Voltage VCE=45V 1. 1.BASE High Totalpower Dissipation Pc=225mW 2.EMITTER High life And Good Linearity 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characterist

Otros transistores... MMBT5401-HAF, MMBT8050CW, MMBT8050DW, MMBT9012H-H23, MMBT9012H-H35, MMBT9013G, MMBT9013H, MMBT9013H-H23, TIP122, MMBT9014C, MMBT9014C1, MMBT9014D, MMBT9015B, MMBT9015C, MMBT9015D, MMBT9018G, MMBT9018H